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參數資料
| 型號： | HM41-21015LF |
| 廠商： | BI TECHNOLOGIES CORP |
| 元件分類： | 脈沖/數據通信變壓器 |
| 英文描述： | Toroid Style Gate Drive Transformers |
| 中文描述： | PULSE TRANSFORMER FOR GATE DRIVE APPLICATION(S) |
| 封裝： | ROHS COMPLIANT |
| 文件頁數： | 1/2頁 |
| 文件大小： | 412K |
| 代理商： | HM41-21015LF |
www.bitechnologies.com
MAGNETIC COMPONENTS SELECTOR GUIDE 2007/08 EDITION
We reserve the right to change specifications without prior notice.
20
HM41-10812LF
HM41-21010LF
HM41-11010LF
HM41-11210LF
HM41-11410LF
HM41-21015LF
HM41-11510LF
HM41-12010LF
HM41-12020LF
8:8:12
10:10
10:10:10
12:12:10
14:14:10
10:15
15:15:10
20:20:10
20:20:20
0.14
0.22
0.22
0.31
0.42
0.22
0.48
0.86
0.86
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.060
0.072
0.072
0.077
0.090
0.072
0.100
0.138
0.156
0.097
0.074
0.074
0.074
0.074
0.100
0.074
0.074
0.156
52
65
65
78
91
65
98
130
130
4200
-
4200
4200
4200
-
4200
4200
4200
500
4200
500
500
500
4200
500
500
500
1
2
1
1
1
2
1
1
1
Operating Temperature Range
Insulation Resistance, Minimum
Temperature Rise, Maximum
Current Rating
-25°C to +85°C
100M
40°C
0.3 Amps
Electrical / Environmental
Toroid Style Gate Drive Transformers
RoHS
Compliant
Schematics
Specifications @ 25°C
Notes:
(1) Leakage inductance is measured at winding (3-4) with all other winding(s) shorted.
(2) Hi-Pot tester setting : 0.5mA maximum leakage current, 3 seconds duration.
Part
Number
Inductance
10kHz, 50mV Inductance
P(1-6)
mH Min.
Leakage
(1)
Turns
±0
N1:N2:N3
DC Resistance
P(1-6)
Max.
ET
Isolation
(2)
P(3-4)
μH Min.
P(3-4)
Max.
P(1-6)
V-μS Max.
N3-N1/N2
Vrms
N1-N2
Vrms
Schematic
Packaging
Standard:
Vacuum Tray
Model
Capacity Per Tray
(Units)
90
90
Capacity Per Carton
(Unit)
360
360
HM41-1XXXXLF
HM41-2XXXXLF
Schematic 1
(HM41-1XXXXLF)
Schematic 2
(HM41-2XXXXLF)
相關PDF資料 |
PDF描述 |
|---|---|
| HM4315P | x1 SRAM |
| HM4334-3 | x4 SRAM |
| HM4334-4 | x4 SRAM |
| HM4334P-3 | x4 SRAM |
| HM4334P-3L | x4 SRAM |
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|---|---|
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