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參數資料

型號：	HM5112805F-6
廠商：	Hitachi,Ltd.
英文描述：	128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
中文描述：	128M的內存江戶（16 Mword × 8位）8K的refresh/4k刷新
文件頁數：	1/34頁
文件大小：	480K
代理商：	HM5112805F-6

HM5112805F-6, HM5113805F-6

128M EDO DRAM (16-Mword

8-bit)

8k refresh/4k refresh

ADE-203-1050C (Z)

Rev. 3.0

Feb. 2, 2000

Description

The Hitachi HM5112805F, HM5113805F are 128M-bit dynamic RAMs organized as 16,777,216-word

8-bit. They have realized high performance and low power by employing CMOS process technology.

HM5112805F, HM5113805F offer Extended Data Out (EDO) Page Mode as a high speed access mode.

They are packaged in 32-pin plastic TSOPII.

Features

Single 3.3 V supply: 3.3 V

0.3 V

Access time: 60 ns (max)

Power dissipation

Active:

720 mW (max) (HM5112805F)

792 mW (max) (HM5113805F)

Standby : 3.6 mW (max) (CMOS interface)

: 1.8 mW (max) (CMOS interface) (L-version)

EDO page mode capability

Refresh cycles

RAS

-only refresh

8192 cycles/64 ms (HM5112805F)

4096 cycles/64 ms (HM5113805F)

CBR/Hidden refresh

4096 cycles/64 ms (HM5112805F, HM5113805F)

相關PDF資料	PDF描述
HM5112805FLTD-6	128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5112805FTD-6	128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5113805F-6	128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5113805FLTD-6	128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5113805FTD-6	128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh

相關代理商/技術參數	參數描述
HM5112805FLTD-6	制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5112805FTD-5	制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M EDO DRAM (16-Mword × 8-bit) 8k refresh/4k refresh
HM5112805FTD-6	制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
HM5112805LTD-6	制造商:未知廠家制造商全稱:未知廠家功能描述:x8 EDO Page Mode DRAM
HM5112805TD-5	制造商:未知廠家制造商全稱:未知廠家功能描述:x8 EDO Page Mode DRAM

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