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參數(shù)資料
| 型號： | HM5116100S-6 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
| 中文描述： | 1,600計劃生育的DRAM（16 Mword × 1位）4K的刷新 |
| 文件頁數(shù)： | 1/24頁 |
| 文件大小： | 217K |
| 代理商： | HM5116100S-6 |
HM5116100 Series
16 M FP DRAM (16-Mword
×
1-bit)
4 k Refresh
ADE-203-646E (Z)
Rev. 5.0
Nov. 1997
Description
The Hitachi HM5116100 is a CMOS dynamic RAM organized 16,777,216-word
×
1-bit. It employs the
most advanced 0.5
μ
m CMOS technology for high performance and low power. The HM5116100 offers
Fast Page Mode as a high speed access mode. It is packaged in 26-pin plastic SOJ.
Features
Single 5 V (
±
10%)
Access time: 60 ns/70 ns (max)
Power dissipation
Active mode: 440 mW/385 mW (max)
Standby mode 11 mW (max)
Fast page mode capability
Refresh cycles
4096 refresh cycles : 64 ms
3 variations of refresh
RAS
-only refresh
CAS
-before-
RAS
refresh
Hidden refresh
Test function
16-bit parallel test mode
Ordering Information
Type No.
Access time
Package
HM5116100S-6
HM5116100S-7
60 ns
70 ns
300-mil 26-pin plastic SOJ (CP-26/24DB)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM5116100S-7 | 16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
| HM5117805J-5 | 16M EDO DRAM(2-Mword*8-bit) 2k Refresh |
| HM5117805J-6 | 16M EDO DRAM(2-Mword*8-bit) 2k Refresh |
| HM5117805J-7 | 16 M EDO DRAM(2-Mword*8-bit) 2 k Refresh |
| HM5117805LJ-5 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM5116100S-7 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:16M FP DRAM (16-Mword x 1-bit) 4k Refresh |
| HM5116100Z-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Fast Page Mode DRAM |
| HM5116100Z-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Fast Page Mode DRAM |
| HM5116100Z-7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Fast Page Mode DRAM |
| HM5116100Z-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Fast Page Mode DRAM |
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