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參數(shù)資料
型號(hào): HM62256BLTM-8
廠商: Hitachi,Ltd.
英文描述: Dual J-K Negative-Edge-Triggered Flip-Flops With Preset And Clear 16-CDIP -55 to 125
中文描述: 256k的SRAM(32 KWord的× 8位)
文件頁(yè)數(shù): 1/20頁(yè)
文件大小: 154K
代理商: HM62256BLTM-8
HM62256B Series
256k SRAM (32-kword
×
8-bit)
ADE-203-135F (Z)
Rev. 6.0
Nov. 13, 1997
Description
The Hitachi HM62256B Series is a CMOS static RAM organized 32,768-word
×
8-bit. It realizes higher
performance and low power consumption by employing 0.8
μ
m Hi-CMOS process technology. The
device, packaged in 8
×
14 mm TSOP, 8
×
13.4 mm TSOP with thickness of 1.2 mm, 450 mil SOP (foot
print pitch width), 600 mil plastic DIP, or 300 mil plastic DIP, is available for high density mounting. It
offers low power standby power dissipation; therefore, it is suitable for battery backup systems.
Features
Single 5.0 V supply: 5.0 V
±
10%
Access time: 55 ns/70 ns/85 ns (max)
Power dissipation:
Active: 25 mW (typ) (f = 1 MHz)
Standby: 1.0
μ
W (typ)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Common data input and output
Three state output
Directly TTL compatible all inputs and outputs
Battery backup operation
相關(guān)PDF資料
PDF描述
HM62256BLFP-5SLT 256k SRAM (32-kword x 8-bit)
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HM62256BLFP-7ULT 256k SRAM (32-kword x 8-bit)
HM62256BLP-7 256k SRAM (32-kword x 8-bit)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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