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參數(shù)資料
型號(hào): HM628511H
廠商: Hitachi,Ltd.
英文描述: 4M High Speed SRAM (512-kword x 8-bit)
中文描述: 4分高速SRAM(512 - KWord的× 8位)
文件頁(yè)數(shù): 1/13頁(yè)
文件大小: 75K
代理商: HM628511H
HM628511H Series
4M High Speed SRAM (512-kword
×
8-bit)
ADE-203-762D (Z)
Rev. 1.0
Sep. 15, 1998
Description
The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word
×
8-bit. It has realized
high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high
speed circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged
in 400-mil 36-pin plastic SOJ.
Features
Single 5.0 V supply : 5.0 V
±
10 %
Access time 10 /12 /15 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current : 180 / 160 / 140 mA (max)
TTL standby current : 70 / 60 / 50 mA (max)
CMOS standby current : 5 mA (max)
: 1.2 mA (max) (L-version)
Data retension current: 0.8 mA (max) (L-version)
Data retension voltage: 2 V (min) (L-version)
Center V
CC
and V
SS
type pinout
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM628511HC 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M High Speed SRAM (512-kword x 8-bit)
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HM628511HCJP-10 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M High Speed SRAM (512-kword x 8-bit)
HM628511HCJP-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM: Notes on Usage Technical Update/Device
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