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參數資料
型號: HM628512B
廠商: Hitachi,Ltd.
英文描述: 4 M SRAM (512-kword ×8-bit)(4 M 靜態RAM(512k字×8位))
中文描述: 四米的SRAM(512 - KWord的× 8位)(4個M靜態隨機存儲器(為512k字× 8位))
文件頁數: 1/16頁
文件大小: 88K
代理商: HM628512B
HM628512B Series
4 M SRAM (512-kword
×
8-bit)
ADE-203-903D (Z)
Rev. 3.0
Aug. 24, 1999
Description
The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword
×
8-bit. It realizes higher density,
higher performance and low power consumption by employing 0.35
μ
m Hi-CMOS process technology. The
device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP,
is available for high density mounting. The HM628512B is suitable for battery backup system.
Features
Single 5 V supply
Access time: 55/70 ns (max)
Power dissipation
— Active: 50 mW/MHz (typ)
— Standby: 10
μ
W (typ)
Completely static memory. No clock or timing strobe required
Equal access and cycle times
Common data input and output: Three state output
Directly TTL compatible: All inputs and outputs
Battery backup operation
a
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相關代理商/技術參數
參數描述
HM628512BFP 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4 M SRAM (512-kword x 8-bit)
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HM628512BFPSERIES 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
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