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參數資料
| 型號： | HM62L36256BP-33 |
| 英文描述： | Instructions for Using SRAM Devices Technical Update/Device |
| 中文描述： | 指示使用SRAM器件技術更新/設備 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 12K |
| 代理商： | HM62L36256BP-33 |
1
HITACHI SEMICONDUCTOR TECHNICAL UPDATE
30 July 2001
DATE
No.
TN-M62-090A/E
THEME
Instructions for Using SRAM Devices
CLASSIFICATION
PRODUCT NAME
All SRAM Products
Lot
All lots
REFERENCE
DOCUMENTS
Hitachi IC Memory Data Book Mar. 2001
ADE-403-001Q
Effective Date
Permanent
As SRAM products become faster, various design margins are becoming difficult to secure. There is an increased
possibility of the disruption of normal operation by noise in the input signal or from the power supply. Before using
our SRAM products, please note the following points which you may recognize by reading the notes in the Hitachi
IC Memory Data Book on the Instructions for Using Memory Devices. This will help you to prevent abnormal
operation of the SRAM.
1. Precaution
When operating a semiconductor product, input-signal noise or power-supply noise may prevent the normal
operation of the product and cause a malfunction of some kind. Input-signal noise includes overshooting,
undershooting, and distortion of the input waveform near the threshold voltage. Make sure that the values of any
overshooting or undershooting are within the specified values for the product as described in Hitachi’s Data Book.
Minimize the input waveform’s distortion near the threshold voltage. The level of power-supply noise should be
10% or less than 10% of the peak-to-peak standard power-supply voltage.
2. Countermeasures
(1) Minimize overshooting, undershooting, and distortion of input waveform
a. Place resistors (50
or less) in series on each input
b. Place terminal resistors on the ends of input line
c. Make good choices in terms of pattern layout and wiring methods
d. Suppress instabilities of reference voltages (GND level etc.)
(2) Reduce power-supply noise
a. Place a bypass capacitor (0.1 to 0.01
μ
F) at the shortest possible distance from the device
b. Make good choices in terms of pattern layout and wiring methods
(3) When replacing an existing product, please prepare a board that suits the product that is now on the market in
terms of the decreased operational margins that go along with the higher speeds of product operation.
Spec. change
Supplement of Documents
Limitation on Use
Product line addition
Others
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| HM62V16100LBPI-5 | Instructions for Using SRAM Devices Technical Update/Device |
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| HM62V16512LBPI-5 | Instructions for Using SRAM Devices Technical Update/Device |
| HM62V16512LBPI-5SL | Instructions for Using SRAM Devices Technical Update/Device |
| HM62V8512CLTS-5 | Instructions for Using SRAM Devices Technical Update/Device |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HM62V16256CLTT-5SI | 制造商:Hitachi 功能描述: |
| HM62V16258CLTT-5SL | 制造商:Renesas Electronics Corporation 功能描述: |
| HM62V16514LTTI-5SL | 制造商:Renesas Electronics Corporation 功能描述: |
| HM62V8100LTTI-5SL | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 8M-Bit 1M x 8 55ns 44-Pin TSOP-II 制造商:Renesas Electronics 功能描述:8M~8 55ns 3V TSOP 制造商:Renesas Electronics Corporation 功能描述:IC,Memory,SRAM,low power,TSOP4 |
| HM62W16255HCJP12 | 制造商:Renesas Electronics Corporation 功能描述: |
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