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參數(shù)資料
| 型號(hào)： | HM62V16256BLTT-8SL |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4 M SRAM (256-kword x 16-bit) |
| 中文描述： | 四米的SRAM（256 - KWord的x 16位） |
| 文件頁(yè)數(shù)： | 1/16頁(yè) |
| 文件大小： | 78K |
| 代理商： | HM62V16256BLTT-8SL |
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HM62V16256B Series
4 M SRAM (256-kword
×
16-bit)
ADE-203-933C (Z)
Rev. 2.0
Oct. 14, 1999
Description
The Hitachi HM62V16256B Series is 4-Mbit static RAM organized 262,144-word
×
16-bit. HM62V16256B
Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS
process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup
systems. It is packaged in standard 44-pin plastic TSOPII.
Features
Single 3.0 V supply: 2.7 V to 3.6 V
Fast access time: 70 ns/85 ns (max)
Power dissipation:
Active: 9 mW (typ)
Standby: 3 μW (typ)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
2 chip selection for battery backup
相關(guān)PDF資料 |
PDF描述 |
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| HM62V16256B | 4 M SRAM (256-kword ×16-bit)(4 M 靜態(tài)RAM(256k字×16位)) |
| HM62V16256CBPI | 4 M SRAM (256-kword ×16-bit)(4M靜態(tài)RAM (256k字 ×16位)) |
| HM62V16256CI | Wide Temperature Range Version4 M SRAM (256-kword x 16-bit) |
| HM62V16256CLTTI-7 | Wide Temperature Range Version4 M SRAM (256-kword x 16-bit) |
| HM62V16256CLBP-5 | 4 M SRAM (256-kword x16-bit) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM62V16256CLTT-5SI | 制造商:Hitachi 功能描述: |
| HM62V16258CLTT-5SL | 制造商:Renesas Electronics Corporation 功能描述: |
| HM62V16514LTTI-5SL | 制造商:Renesas Electronics Corporation 功能描述: |
| HM62V8100LTTI-5SL | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 8M-Bit 1M x 8 55ns 44-Pin TSOP-II 制造商:Renesas Electronics 功能描述:8M~8 55ns 3V TSOP 制造商:Renesas Electronics Corporation 功能描述:IC,Memory,SRAM,low power,TSOP4 |
| HM62W16255HCJP12 | 制造商:Renesas Electronics Corporation 功能描述: |
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