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參數資料
| 型號： | HM62V16258BLTT-7SL |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4 M SRAM (256-kword x 16-bit) |
| 中文描述： | 四米的SRAM（256 - KWord的x 16位） |
| 文件頁數： | 1/16頁 |
| 文件大?。?/td> | 74K |
| 代理商： | HM62V16258BLTT-7SL |
HM62V16258B Series
4 M SRAM (256-kword
×
16-bit)
ADE-203-975B (Z)
Rev. 2.0
Oct. 14, 1999
Description
The Hitachi HM62V16258B Series is 4-Mbit static RAM organized 262,144-word
×
16-bit. HM62V16258B
Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS
process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup
systems. It is packaged in standard 44-pin plastic TSOPII.
Features
Single 3.0 V supply: 2.7 V to 3.6 V
Fast access time: 70 ns/85 ns (max)
Power dissipation:
Active: 9 mW (typ)
Standby: 3 μW (typ)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
相關PDF資料 |
PDF描述 |
|---|---|
| HM62V16258BLTT-8 | 4 M SRAM (256-kword x 16-bit) |
| HM62V16258BLTT-8SL | 4 M SRAM (256-kword x 16-bit) |
| HM62V16258B | 4 M SRAM (256-kword ×16-bit)(4M靜態RAM (256k字 ×16位)) |
| HM62V16258CI | 4 M SRAM (256-kword ×16-bit)(4M靜態RAM (256k字 ×16位)) |
| HM62V16258C | 4 M SRAM (256-kword ×16-bit)(4M靜態RAM (256k字 ×16位)) |
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參數描述 |
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| HM62V8100LTTI-5SL | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 3V 8M-Bit 1M x 8 55ns 44-Pin TSOP-II 制造商:Renesas Electronics 功能描述:8M~8 55ns 3V TSOP 制造商:Renesas Electronics Corporation 功能描述:IC,Memory,SRAM,low power,TSOP4 |
| HM62W16255HCJP12 | 制造商:Renesas Electronics Corporation 功能描述: |
| HM62W4100HJP15 | 制造商:Renesas Electronics Corporation 功能描述: |
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