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參數(shù)資料
| 型號： | HM62W16255HCJP-10 |
| 廠商： | Hitachi,Ltd. |
| 元件分類： | SRAM |
| 英文描述： | 4M High Speed SRAM (256-kword x 16-bit) |
| 中文描述： | 4分高速SRAM（256 - KWord的x 16位） |
| 文件頁數(shù)： | 1/18頁 |
| 文件大小： | 92K |
| 代理商： | HM62W16255HCJP-10 |
Preliminary: The specification of this device are subject to change without notice. Please contact your nearest
Hitachi’s Sales Dept. regarding specification.
HM62W16255HC Series
4M High Speed SRAM (256-kword
×
16-bit)
ADE-203-1200 (Z)
Preliminary
Rev. 0.0
Sep. 1, 2000
Description
The HM62W16255HC is a 4-Mbit high speed static RAM organized 256-kword
×
16-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing
technology. It is most appropriate for the application which requires high speed, high density memory and
wide bit width configuration, such as cache and buffer memory in system. The HM62W16255HC is
packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.
Features
Single 3.3 V supply: 3.3 V
±
0.3 V
Access time: 10 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 145 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
: 1 mA (max) (L-version)
Data retention current: 0.6 mA (max) (L-version)
Data retention voltage: 2.0 V (min) (L-version)
Center V
CC
and V
SS
type pinout
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