欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: HM62W16255HCJPI-12
英文描述: Instructions for Using SRAM Devices Technical Update/Device
中文描述: 指示使用SRAM器件技術(shù)更新/設(shè)備
文件頁數(shù): 1/1頁
文件大小: 12K
代理商: HM62W16255HCJPI-12
1
HITACHI SEMICONDUCTOR TECHNICAL UPDATE
30 July 2001
DATE
No.
TN-M62-090A/E
THEME
Instructions for Using SRAM Devices
CLASSIFICATION
PRODUCT NAME
All SRAM Products
Lot
All lots
REFERENCE
DOCUMENTS
Hitachi IC Memory Data Book Mar. 2001
ADE-403-001Q
Effective Date
Permanent
As SRAM products become faster, various design margins are becoming difficult to secure. There is an increased
possibility of the disruption of normal operation by noise in the input signal or from the power supply. Before using
our SRAM products, please note the following points which you may recognize by reading the notes in the Hitachi
IC Memory Data Book on the Instructions for Using Memory Devices. This will help you to prevent abnormal
operation of the SRAM.
1. Precaution
When operating a semiconductor product, input-signal noise or power-supply noise may prevent the normal
operation of the product and cause a malfunction of some kind. Input-signal noise includes overshooting,
undershooting, and distortion of the input waveform near the threshold voltage. Make sure that the values of any
overshooting or undershooting are within the specified values for the product as described in Hitachi’s Data Book.
Minimize the input waveform’s distortion near the threshold voltage. The level of power-supply noise should be
10% or less than 10% of the peak-to-peak standard power-supply voltage.
2. Countermeasures
(1) Minimize overshooting, undershooting, and distortion of input waveform
a. Place resistors (50
or less) in series on each input
b. Place terminal resistors on the ends of input line
c. Make good choices in terms of pattern layout and wiring methods
d. Suppress instabilities of reference voltages (GND level etc.)
(2) Reduce power-supply noise
a. Place a bypass capacitor (0.1 to 0.01
μ
F) at the shortest possible distance from the device
b. Make good choices in terms of pattern layout and wiring methods
(3) When replacing an existing product, please prepare a board that suits the product that is now on the market in
terms of the decreased operational margins that go along with the higher speeds of product operation.
Spec. change
Supplement of Documents
Limitation on Use
Product line addition
Others
相關(guān)PDF資料
PDF描述
HM62W16255HCLJP-12 Instructions for Using SRAM Devices Technical Update/Device
HM62W16255HCLTT-12 Instructions for Using SRAM Devices Technical Update/Device
HM64YLB36512BP-28 Instructions for Using SRAM Devices Technical Update/Device
HM64YLB36512BP-33 Instructions for Using SRAM Devices Technical Update/Device
HM64YLB36512SERIES
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM62W4100HJP15 制造商:Renesas Electronics Corporation 功能描述:
HM62W8512BLFP-5 制造商:HITACHI 功能描述:
HM62W8512BLTTI7 制造商:Hitachi 功能描述:
HM-630 制造商:Black Box Corporation 功能描述:FACE PLATE:HM-STAINLESS
HM63021FP 制造商:Panasonic Industrial Company 功能描述:IC
主站蜘蛛池模板: 呼伦贝尔市| 昌平区| 黎川县| 昔阳县| 蕉岭县| 贵德县| 巍山| 宜宾市| 竹溪县| 莱芜市| 平安县| 忻城县| 沁水县| 镇远县| 朝阳市| 腾冲县| 定州市| 巩义市| 新龙县| 永修县| 安义县| 鲁甸县| 贺兰县| 温泉县| 漯河市| 宁陵县| 秭归县| 界首市| 温州市| 长宁区| 双鸭山市| 宁阳县| 沭阳县| 临夏市| 米脂县| 江西省| 盘山县| 随州市| 辉南县| 安康市| 赞皇县|