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參數(shù)資料
| 型號： | HM62W16255HTT-12 |
| 廠商： | Hitachi,Ltd. |
| 元件分類： | SRAM |
| 英文描述： | 4M High Speed SRAM (256-kword x 16-bit) |
| 中文描述： | 4分高速SRAM（256 - KWord的x 16位） |
| 文件頁數(shù)： | 1/17頁 |
| 文件大小： | 101K |
| 代理商： | HM62W16255HTT-12 |
HM62W16255H Series
4M High Speed SRAM (256-kword
×
16-bit)
ADE-203-751D (Z)
Rev. 1.0
Sep. 15, 1998
Description
The HM62W16255H is a 4-Mbit high speed static RAM organized 256-kword
×
16-bit. It has realized high
speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed
circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. The
HM62W16255H is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density
surface mounting.
Features
Single 3.3 V supply: 3.3 V
±
0.3V
Access time: 12/15 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 180/160 mA (max)
TTL standby current: 60/50 mA (max)
CMOS standby current: 5 mA (max)
: 1mA (max) (L-version)
Data retension current: 0.6 mA (max) (L-version)
Data retension voltage: 2.0 V (min) (L-version)
Center V
CC
and V
SS
type pinout
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| HM62W16255HTT-15 | 4M High Speed SRAM (256-kword x 16-bit) |
| HM62W16255H | 4M High Speed SRAM (256-kword ×16-bit)(4M高速靜態(tài)RAM(256k字 ×16位)) |
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| HM62W16256BLTT-7 | 4 M SRAM (256-kword x 16-bit) |
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