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參數資料
型號: HM62W8511HCJP-12
廠商: Renesas Technology Corp.
英文描述: 4M High Speed SRAM (512-kword x 8-bit)
中文描述: 4分高速SRAM(512 - KWord的× 8位)
文件頁數: 1/13頁
文件大小: 63K
代理商: HM62W8511HCJP-12
HM62W8511HI Series
4M High Speed SRAM (512-kword
×
8-bit)
ADE-203-1036A(Z)
Rev. 1.0
Apr. 15, 1999
Description
The HM62W8511HI is a 4-Mbit high speed static RAM organized 512-kword
×
8-bit. It has realized high
speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed
circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged
in 400-mil 36-pin SOJ.
Features
Single supply : 3.3 V
±
0.3 V
Access time 15 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current : 130 mA (max)
TTL standby current : 50 mA (max)
CMOS standby current : 5 mA (max)
Center V
CC
and V
SS
type pinout
Temperature range: –40 to 85
°
C
相關PDF資料
PDF描述
HM62W8511HCLJP-10 BOX 5.0X1.85X1.0 W/CLP BLK
HM62W8511HCLJP-12 BOX 5.0X1.85X1.0 W/CLP GRY
HM62W8511H 4M High Speed SRAM (512-kword ×8-bit)(4M高速靜態RAM(512k字 ×8位))
HM62W8512BI 4 M SRAM (512-kword×8-bit)(4 M 靜態RAM(512k字×8位))
HM62W8512BLTT-7UL Octal Buffer/Driver With Open-Collector Outputs 20-PDIP -40 to 85
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