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參數資料
| 型號： | HM62W8512BLTTI-8 |
| 廠商： | Hitachi,Ltd. |
| 元件分類： | SRAM |
| 英文描述： | 4 M SRAM (512-kword x 8-bit) |
| 中文描述： | 四米的SRAM（512 - KWord的× 8位） |
| 文件頁數： | 1/14頁 |
| 文件大小： | 58K |
| 代理商： | HM62W8512BLTTI-8 |
HM62W8512BI Series
4 M SRAM (512-kword
×
8-bit)
ADE-203-1086A (Z)
Rev. 1.0
Jul. 13, 1999
Description
The Hitachi HM62W8512BI is a 4-Mbit static RAM organized 512-kword
×
8-bit. HM62W8512BI Series
has realized higher density, higher performance and low power consumption by employing Hi-CMOS process
technology. The HM62W8512BI Series offers low power standby power dissipation; therefore, it is suitable
for battery backup systems. It is packaged in standard 32-pin TSOP II.
Features
Single 3.3 V supply: 3.3 V
±
0.3V
Access time: 70/85 ns (max)
Power dissipation
Active: 16.5 mW/MHz (typ)
Standby: 3.3
μ
W (typ)
Completely static memory. No clock or timing strobe required
Equal access and cycle times
Common data input and output: Three state output
Directly LV-TTL compatible: All inputs and outputs
Battery backup operation
Operating temperature: –40 to +85C
Ordering Information
Type No.
Access time
Package
HM62W8512BLTTI-7
HM62W8512BLTTI-8
70 ns
85 ns
400-mil 32-pin plastic TSOP II (TTP-32D)
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