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參數資料
| 型號： | HMBTA44 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 37K |
| 代理商： | HMBTA44 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBTA44
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HN200208
Issued Date : 1993.06.23
Revised Date : 2004.09.08
Page No. : 1/4
HMBTA44
HSMC Product Specification
Description
The HMBTA44 is designed for application requires high voltage.
Features
High voltage: V
CEO
=400V(min) at I
C
=1mA
High current: I
C
=300mA at 25
°
C
Complementary with HMBTA94
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°
C
Junction Temperature................................................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25
°
C)............................................................................................................... 350 mW
Maximum Voltages and Currents (T
A
=25
°
C)
V
CBO
Collector to Base Voltage ......................................................................................................................... 450 V
V
CEO
Collector to Emitter Voltage...................................................................................................................... 400 V
V
EBO
Emitter to Base Voltage................................................................................................................................ 6 V
I
C
Collector Current........................................................................................................................................ 300 mA
Electrical Characteristics
(T
A
=25
°
C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
*V
CE(sat)1
*V
CE(sat)2
*V
CE(sat)3
*V
BE(sat)
*h
FE1
*h
FE2
*h
FE3
*h
FE4
Cob
Min.
450
400
6
-
-
-
-
-
-
-
40
50
45
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
Max.
-
-
-
100
100
500
400
500
750
750
-
300
-
-
6
Unit
V
V
V
nA
nA
nA
mV
mV
mV
mV
Test Conditions
I
C
=100uA
I
C
=1mA
I
E
=10uA
V
CB
=400V
V
EB
=4V
V
CE
=400V
I
C
=1mA, I
B
=0.1mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
V
CB
=20V, f=1MHz
pF
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
SOT-23
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