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| 型號(hào)： | HMBTA56 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進(jìn)步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 28K |
| 代理商： | HMBTA56 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBTA56
PNP SILICON TRANSISTOR
Spec. No. : HE6856
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/3
HMBTA56
HSMC Product Specification
Description
Amplifier Transistor
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage........................................................................................ -80 V
VCEO Collector to Emitter Voltage..................................................................................... -80 V
VEBO Emitter to Base Voltage............................................................................................. -4 V
IC Collector Current ...................................................................................................... -500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Min.
-80
-80
-4
-
-
-
-
50
50
100
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-0.25
-1.2
-
-
-
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=-100uA
IC=-1mA
IE=-100uA
VCB=-80V
VCE=-60V
IC=-100mA, IB=-10mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-100mA
VCE=-2V, IC=-10mA, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
SOT-23
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