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參數資料
| 型號： | HMBTA64 |
| 英文描述： | PNP-30V-500mA225mW|Bipolar Transistors |
| 中文描述： | 進步黨- 30V的，500mA225mW |雙極晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 31K |
| 代理商： | HMBTA64 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBTA42
NPN EPITACIAL PLANAR TRANSISTOR
Spec. No. : HE6848
Issued Date : 1994.07.29
Revised Date : 2000.06.15
Page No. : 1/3
HMBTA42
HSMC Product Specification
Description
High Voltage Transistor
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C) .............................................................................. 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage...................................................................................... 300 V
VCEO Collector to Emitter Voltage................................................................................... 300 V
VEBO Emitter to Base Voltage............................................................................................. 6 V
IC Collector Current....................................................................................................... 500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
300
300
6
-
-
-
-
25
40
40
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
500
900
-
-
-
-
3
Unit
V
V
V
nA
nA
mV
mV
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=200V
VEB=6V
IC=20mA, IB=2mA
IC=20mA, IB=2mA
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=30mA, VCE=10V
IC=10mA, VCE=20V, f=100MHz
VCB=20V, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
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