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參數資料
| 型號： | HMC121G8 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC SMT VOLTAGE-VARIABLE ATTENUATOR DC - 8 GHz |
| 中文描述： | 砷化鎵微波單片集成電路表面貼裝電壓可變衰減器直流- 8千兆赫 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 191K |
| 代理商： | HMC121G8 |
2 - 14
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
MICROWAVE CORPORATION
F
EBRUARY
2001
A
T
2
S
General Description
WIDE BANDWIDTH: DC - 10 GHz
LOW PHASE SHIFT VS. ATTENUATION
25 dB ATTENUATION RANGE
SIMPLIFIED VOLTAGE CONTROL
The HMC121C8 is an absorptive Voltage
Variable Attenuator (VVA) in a non-hermetic
surface-mount package covering DC - 10
GHz. It features an on-chip reference at-
tenuator for use with an external op-amp to
provide simple single voltage attenuation
control, 0 to -3V. The device is ideal in
designs where an analog DC control signal
must control RF signal levels over a 25 dB
amplitude range. Applications include AGC
circuits and temperature compensation of
multiple gain stages in microwave point-to-
point and VSAT radios. See HMC121G8
for a hermetic SMT version of this device.
Features
Guaranteed Performance,
50 ohm system, -55 to +85 deg C
GaAs MMIC SMT VOLTAGE-VARIABLE ATTENUATOR DC - 10 GHz
HMC121C8
Parameter
Min
Typical
Max
Units
Insertion Loss
DC - 6
DC - 8
DC - 10 GHz :
GHz :
GHz :
2.0
2.2
3.5
2.5
3.2
4.5
dB
dB
dB
Attenuation Range
DC - 6
DC - 10 GHz :
GHz:
20
25
25
30
dB
Return Loss
DC - 8
DC - 10 GHz :
GHz:
11
8
15
12
dB
dB
Switching Characteristics
tRISE,tFALL (10/90% RF):
tON, tOFF (50% CTL to 10/90% RF):
3
6
ns
ns
Input Power for 0.25 dB Compression
(0.5 - 10 GHz)
Min.Atten:
Atten.>2 dB:
+3
-3
dBm
dBm
Input Third Order Intercept (two - 8 dBm
signals, 0.5 - 10 GHz)
Min.Atten:
+18
+10
dBm
dBm
V
03.0400
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| HMC121G8_01 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SMT VOLTAGE-VARIABLE ATTENUATOR, DC - 8 GHz |
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