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參數(shù)資料
| 型號： | HMC373LP3 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 元件分類： | FPGA |
| 英文描述： | 600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 的GaAs PHEMT MMIC低噪聲放大器瓦特/旁路模式，700 - 1000兆赫 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 317K |
| 代理商： | HMC373LP3 |
MICROWAVE CORPORATION
8 - 132
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
HMC373LP3
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz
v01.0604
General Description
Features
Functional Diagram
The HMC373LP3 is a versatile, high dynamic range
GaAs MMIC Low Noise Amplifier that integrates a
low loss LNA bypass mode on the IC. The amplifier
is ideal for GSM & CDMA cellular basestation front-
end receivers operating between 700 and 1000
MHz and provides 0.9 dB noise figure, 14 dB of gain
and +35 dBm IP3 from a single supply of +5.0V @
90 mA. Input and output return losses are 28 and
12 dB respectively with the LNA requiring minimal
external components to optimize the RF input
match, RF ground and DC bias. By presenting an
open or short circuit to a single control line, the LNA
can be switched into a low 2.0 dB loss bypass mode
reducing the current consumption to 10 μA. A low
cost, leadless 3x3 mm QFN surface mount package
(LP3) houses the low noise amplifier.
Noise Figure: 0.9 dB
+35 dBm Output IP3
Gain: 14 dB
Low Loss LNA Bypass Path
Single Supply: +5.0 V @ 90 mA
50 Ohm Matched Output
Electrical Specifications,
T
A
= +25° C, Vdd = +5V
Typical Applications
The HMC373LP3 is ideal for
basestation receivers:
GSM, GPRS & EDGE
CDMA & W-CDMA
Private Land Mobile Radio
Parameter
LNA Mode
LNA Mode
Bypass Mode
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range
810 - 960
700 - 1000
700 - 1000
MHz
Gain
11.5
13.5
10.5
14
-2.8
-2.0
dB
Gain Variation Over Temperature
0.008
0.015
0.008
0.015
0.002
0.004
dB / °C
Noise Figure
0.9
1.3
1.0
1.4
dB
Input Return Loss
28
25
30
dB
Output Return Loss
12
11
25
dB
Reverse Isolation
20
19
dB
Power for 1dB Compression (P1dB)*
18
21
17
20
30
dBm
Saturated Output Power (Psat)
22.5
22
dBm
Third Order Intercept (IP3)*
(-20 dBm Input Power per tone, 1 MHz tone spacing)
35.5
35
50
dBm
Supply Current (Idd)
90
90
0.01
mA
* P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB and IP3 for Bypass Mode are referenced to RFIN.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC373LP3_06 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz |
| HMC373LP3_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz |
| HMC373LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA HI IP3 16-QFN |
| HMC373LP3ETR | 制造商:Hittite Microwave Corp 功能描述:HMC373 Series 0.7 - 1 GHz GaAs PHEMT MMIC Low Noise Amplifier - 3x3 mm QFN-16 |
| HMC374 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz |
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