- 您現在的位置：買賣IC網 > PDF目錄367211 > HMC415LP3 (美國訊泰微波有限公司上海代表處) 600000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN PDF資料下載
參數資料
| 型號： | HMC415LP3 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 元件分類： | FPGA |
| 英文描述： | 600000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 砷化鎵的InGaP HBT MMIC功率放大器，四月九日至5月九號吉赫 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 309K |
| 代理商： | HMC415LP3 |
MICROWAVE CORPORATION
8 - 188
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
HMC415LP3
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v02.0604
General Description
The HMC415LP3 is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifier which operates between
4.9 and 5.9 GHz. The amplifier is packaged in a
low cost, leadless surface mount package with
an exposed base for improved RF and thermal
performance. With a minimum of external compo-
nents, the amplifier provides 20 dB of gain, +26
dBm of saturated power, and 34% PAE from a
+3.0V supply voltage. Vpd can be used for full
power down or RF output power/current control.
For +15 dBm OFDM output power (64 QAM, 54
Mbps), the HMC415LP3 achieves an error vector
magnitude (EVM) of 3.7% meeting 802.11a lin-
earity requirements.
Features
Gain: 20 dB
Functional Diagram
34% PAE @ Psat = +26 dBm
3.7% EVM @ Pout = +15 dBm
with 54 Mbps OFDM Signal
Supply Voltage: +3.0 V
Power Down Capability
Low External Part Count
Electrical Specifications,
T
A
= +25° C, Vs = 3V, Vpd = 3V
Typical Applications
This amplifier is ideal for use as a power
amplifier for 4.9 - 5.9 GHz applications:
802.11a WLAN
HiperLAN WLAN
Access Points
UNII & ISM Radios
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
4.9 - 5.1
5.1 - 5.4
5.4 - 5.9
GHz
Gain
18
20
18.5
20.5
16
19
dB
Gain Variation Over Temperature
0.04
0.05
0.04
0.05
0.04
0.05
dB /
°
C
Input Return Loss
10
9
8
dB
Output Return Loss
10
12
8
dB
Output Power for 1dB Compression (P1dB)
Icq = 285 mA
Icq = 200 mA
20
22.5
22.0
20.5
23.0
22.5
18
21.5
21.0
dBm
Saturated Output Power (Psat)
25.5
26
24
dBm
Output Third Order Intercept (IP3)
28
31
29
32
27
30
dBm
Error Vector Magnitude
(54 Mbps OFDM Signal @ +15 dBm Pout)
Icq = 200 mA
3.7
%
Noise Figure
6
6
6
dB
Supply Current (Icq)
Vpd = 0V/3V
0.002 /
285
0.002 /
285
0.002 /
285
mA
Control Current (Ipd)
Vpd = 3V
7
7
7
mA
Switching Speed
tOn, tOff
45
45
45
ns
相關PDF資料 |
PDF描述 |
|---|---|
| HMC416LP4 | 600000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC420QS16 | CELLULAR RFIC DOWNCONVERTER, 0.7 - 1.0 GHz |
| HMC421QS16 | PCS/UMTS HIGH IP3 RFIC DOWNCONVERTER, 1.4 - 2.3 GHz |
| HMC422MS8 | GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.2 - 2.5 GHz |
| HMC423MS8 | GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HMC415LP3_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz |
| HMC415LP3E | 制造商:Hittite Microwave Corp 功能描述:IC PWR AMP 5-6GHZ 16-QFN |
| HMC415LP3ETR | 制造商:Hittite Microwave Corp 功能描述:HMC415 Series 4.9 - 5.9 GHz GaAs InGaP HBT MMIC Power Amplifier - QFN-16 |
| HMC416LP4 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz |
| HMC416LP4_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz |
發布緊急采購，3分鐘左右您將得到回復。