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參數(shù)資料
| 型號(hào)： | HMC452QS16G |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | InGaP HBT 1 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz |
| 中文描述： | 1瓦的InGaP HBT功率放大器，0.45 - 2.2吉赫 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 372K |
| 代理商： | HMC452QS16G |
MICROWAVE CORPORATION
8 - 226
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
HMC452QS16G
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.45 - 2.2 GHz
v00.0504
General Description
Features
Functional Diagram
The HMC452QS16G is a high dynamic range
GaAs InGaP Heterojunction Bipolar Transistor
(HBT) 1 watt MMIC power amplifier operating
between 0.45 and 2.2 GHz. Packaged in a
miniature 16 lead QSOP plastic package, the
amplifier gain is typically 15.5 dB from 0.8 to 1.0
GHz and 10 dB from 1.8 to 2.0 GHz. Utilizing a
minimum number of external components and
a single +5V supply, the amplifier output IP3
can be optimized to +48 dBm at 0.9 GHz and
1.9 GHz. The power control (VPD) can be used
for full power down or RF output power/current
control. The high output IP3 and PAE makes the
HMC452QS16G an ideal power amplifier for
Cellular/PCS/3G, WLL, ISM and Fixed Wireless
applications.
Output IP3: +48 dBm
Gain: 15.5 dB @ 900 MHz
46% PAE @ +31 dBm Pout
+24 dBm CDMA2000 Channel Power@ -45 dBc ACP
Single +5V Supply
Integrated Power Control (VPD)
QSOP16G SMT Package: 29.4 mm
2
Electrical Specifications,
T
A
= +25°C, Vs= +5V, VPD = +5V (note 1)
Typical Applications
The HMC452QS16G is ideal for applications requiring
a high dynamic range amplifier:
GSM, GPRS & EDGE
CDMA & W-CDMA
CATV/Cable Modem
Fixed Wireless & WLL
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
810 - 960
1710 - 1990
MHz
Gain
13
15.5
7.5
10
dB
Gain Variation Over Temperature
0.012
0.02
0.012
0.02
dB / °C
Input Return Loss
9
17
dB
Output Return Loss
12
15
dB
Output Power for 1dB Compression (P1dB)
27
30
28
31
dBm
Saturated Output Power (Psat)
31
31.5
dBm
Output Third Order Intercept (IP3) (note 2)
45
48
45
48
dBm
Noise Figure
7
7
dB
Supply Current (Icq)
485
485
mA
Control Current (IPD)
10
10
mA
Note 1: Specifications and data reflect HMC452QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
Note 2: Two-tone input power of -10 dBm per tone, 1 MHz spacing.
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| HMC452QS16G_06 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz |
| HMC452QS16G_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz |
| HMC452QS16GE | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 1W 16-QSOP |
| HMC452ST89 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz |
| HMC452ST89_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz |
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