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參數資料
| 型號： | HMC464LP5 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz |
| 中文描述： | 的GaAs PHEMT MMIC功率放大器，2.0 - 20.0千兆赫 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 237K |
| 代理商： | HMC464LP5 |
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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1
HMC464
GaAs PHEMT MMIC
POWER AMPLIFIER, 2.0 - 20.0 GHz
v02.0704
General Description
Features
+26 dBm P1dB Output Power
Functional Diagram
The HMC464 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between 2 and
20 GHz. The amplifier provides 16 dB of gain, +30
dBm Output IP3 and +26 dBm of output power
at 1 dB gain compression while requiring 290 mA
from a +8V supply. Gain flatness is excellent from
2 - 18 GHz making the HMC464 ideal for EW,
ECM and radar driver amplifier applications. The
HMC464 amplifier I/O’s are internally matched to
50 Ohms facilitating easy integration into Multi-
Chip-Modules (MCMs). All data is with the chip
in a 50 Ohm test fixture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length
0.31mm (12 mils).
Gain: 16 dB
+30 dBm Output IP3
Supply Voltage: +8.0V @ 290 mA
50 Ohm Matched Input/Output
3.12 mm x 1.63 mm x 0.1 mm
Typical Applications
The HMC464 wideband driver is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Fiber Optics
Electrical Specifications,
T
A
= +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
2.0 - 6.0
6.0 - 18.0
18.0 - 20.0
GHz
Gain
14
16
13
16
11
14
dB
Gain Flatness
±0.25
±0.5
±0.75
dB
Gain Variation Over Temperature
0.02
0.03
0.02
0.03
0.03
0.04
dB/ °C
Input Return Loss
15
17
13
dB
Output Return Loss
14
12
11
dB
Output Power for 1 dB Compression (P1dB)
23.5
26.5
22
26
19
22
dBm
Saturated Output Power (Psat)
28
27.5
24.5
dBm
Output Third Order Intercept (IP3)
32
30
24
dBm
Noise Figure
4.0
4.0
6.0
dB
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)
290
290
290
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
相關PDF資料 |
PDF描述 |
|---|---|
| HMC465 | 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC465LP5 | 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC466LP4 | 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC467LP3 | 2 dB LSB GaAs MMIC 2-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 6.0 GHz |
| HMC468LP3 | 1 dB LSB GaAs MMIC 3-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 6.0 GHz |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HMC464LP5_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz |
| HMC464LP5E | 制造商:Hittite Microwave Corp 功能描述:IC PWR AMP MMIC WB PHEMT 32SMD |
| HMC464-SX | 功能描述:RF Amplifier IC General Purpose 2GHz ~ 20GHz Die 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態:有效 頻率:2GHz ~ 20GHz P1dB:26dBm 增益:16dB 噪聲系數:4dB RF 類型:通用 電壓 - 電源:8V 電流 - 電源:290mA 測試頻率:- 封裝/外殼:模具 供應商器件封裝:模具 標準包裝:2 |
| HMC465 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:ACTIVE BIAS CONTROLLER |
| HMC465_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz |
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