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參數資料
型號: HMC469MS8G
廠商: 美國訊泰微波有限公司上海代表處
英文描述: SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
中文描述: SiGe HBT的雙通道增益塊MMIC放大器,直流- 5.0吉赫
文件頁數: 1/8頁
文件大小: 310K
代理商: HMC469MS8G
MICROWAVE CORPORATION
8 - 306
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
HMC469MS8G
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
v00.0504
General Description
Functional Diagram
The HMC469MS8G is a SiGe HBT Dual Channel
Gain Block MMIC SMT amplifier covering DC to
5 GHz. This versatile product contains two gain
blocks, packaged in a single 8 lead plastic MSOP,
for use as either separate cascadable 50 Ohm RF/IF
gain stages, LO or PA drivers or with both amplifiers
combined utilizing external 90° hybrids to create
a high linearity driver amplifier. Each amplifier in
the HMC469MS8G offers 15 dB of gain, +18dBm
P1dB with a +34 dBm output IP3 at 850 MHz while
requiring only 75 mA from a single positive supply.
The combined dual amplifier circuit delivers up
to +20 dBm P1dB with +35dBm OIP3 for specific
application bands through 4 GHz.
+18 dBm P1dB Output Power
15 dB Gain
Output IP3: +34 dBm
Supply (Vs): +5V to +12V
14.9 mm
2
Ultra Small 8 Lead MSOP
Typical Applications
The HMC469MS8G is a dual RF/IF
gain block & LO or PA driver:
Cellular / PCS / 3G
Fixed Wireless & WLAN
CATV, Cable Modem & DBS
Microwave Radio & Test Equipment
Electrical Specifications,
Vs= 8.0 V, Rbias= 51 Ohm, T
A
= +25° C
Parameter
Note: Data taken with broadband bias tee on device output. All specifications refer to a single amplifier.
Min.
Typ.
Max.
Units
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5.0 GHz
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5.0 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
0.5 - 1.0 GHz
1.0 - 2.5 GHz
2.5 - 4.0 GHz
4.0 - 5.0 GHz
DC - 3.0 GHz
3.0 - 5.0 GHz
12.5
11
10
9
7.5
15
13
12
11
9.5
0.008
12
10
8
14
10
8
6
18
18
16
14
12.5
11
34
30
25
23
4.0
5.0
dB
dB
dB
dB
dB
Gain Variation Over Temperature
0.012
dB/ °C
dB
dB
dB
dB
dB
dB
dB
dB
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
15
13
11
9.5
8
dBm
dBm
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
dBm
dBm
dBm
dBm
dB
dB
Noise Figure
Supply Current (Icq)
75
mA
Features
相關PDF資料
PDF描述
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相關代理商/技術參數
參數描述
HMC469MS8G_09 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz
HMC469MS8GE 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 2CH 5GHZ 8-MSOP
HMC469MS8GETR 功能描述:RF Amplifier IC Cellular, CATV 0Hz ~ 5GHz 8-MSOP 制造商:analog devices inc. 系列:- 包裝:剪切帶(CT) 零件狀態:過期 頻率:0Hz ~ 5GHz P1dB:18dBm 增益:15dB 噪聲系數:4dB ~ 5dB RF 類型:手機,CATV 電壓 - 電源:5 V ~ 12 V 電流 - 電源:75mA 測試頻率:- 封裝/外殼:8-TSSOP,8-MSOP(0.118",3.00mm 寬) 供應商器件封裝:8-MSOP 標準包裝:1
HMC470ALP3E 功能描述:RF Attenuator 31dB ±0.3dB 0Hz ~ 3GHz 16-VFQFN Exposed Pad 制造商:analog devices inc. 系列:- 零件狀態:在售 衰減值:31dB 容差:±0.3dB 頻率范圍:0Hz ~ 3GHz 功率(W):- 阻抗:- 封裝/外殼:16-VFQFN 裸露焊盤 標準包裝:1
HMC470ALP3ETR 功能描述:RF Attenuator 31dB ±0.3dB 0Hz ~ 3GHz 16-VFQFN Exposed Pad 制造商:analog devices inc. 系列:- 零件狀態:在售 衰減值:31dB 容差:±0.3dB 頻率范圍:0Hz ~ 3GHz 功率(W):- 阻抗:- 封裝/外殼:16-VFQFN 裸露焊盤 標準包裝:1
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