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參數資料
| 型號： | HMC478ST89E |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz |
| 中文描述： | SiGe HBT增益塊MMIC放大器，直流- 4.0吉赫 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 340K |
| 代理商： | HMC478ST89E |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Designer’s Kit
Available
HMC478ST89
/
478ST89E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
v02.1205
General Description
Functional Diagram
The HMC478ST89 & HMC478ST89E are SiGe
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT amplifiers covering DC to 4 GHz. Packaged
in an industry standard SOT89, the amplifier can be
used as a cascadable 50 Ohm RF/IF gain stage as
well as a LO or PA driver with up to +20 dBm output
power. The HMC478ST89 & HMC478ST89E offers 22
dB of gain with a +30 dBm output IP3 at 850 MHz while
requiring only 62mA from a single positive supply.
The Darlington feedback pair used results in reduced
sensitivity to normal process variations and excellent
gain stability over temperature while requiring a
minimal number of external bias components.
P1dB Output Power: +18 dBm
Gain: 22 dB
Output IP3: +33 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +8V
Industry Standard SOT89 Package
Robust 1,000V ESD, Class 1C
Included in the HMC-DK001 Designer’s Kit
Typical Applications
The HMC478ST89 / HMC478ST89E is an ideal RF/IF
gain block & LO or PA driver:
Cellular / PCS / 3G
Fixed Wireless & WLAN
CATV, Cable Modem & DBS
Microwave Radio & Test Equipment
Electrical Specifications,
Vs= 5.0 V, Rbias= 18 Ohm, T
A
= +25° C
Note: Data taken with broadband bias tee on device output.
Parameter
Min.
Typ.
Max.
Units
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 4.0 GHz
DC - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 3.0 GHz
3.0 - 4.0 GHz
DC - 4.0 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 2.0 GHz
2.0 - 4.0 GHz
19
16
13
11
22
19
16
14
dB
dB
dB
dB
Gain Variation Over Temperature
0.015
15
10
13
13
15
20
18
16
13
11
30
28
25
3
4
0.02
dB/ °C
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
15
13
10
8
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
62
mA
Features
相關PDF資料 |
PDF描述 |
|---|---|
| HMC479MP86 | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz |
| HMC479ST89 | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz |
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| HMC481MP86 | Power Inductor; Series:SDR1006; Inductance:2.2mH; Inductance Tolerance:+/- 10 %; Q Factor:31; Self Resonant Frequency:1.5MHz; Package/Case:101; Terminal Type:PCB Surface Mount; Core Material:Ferrite DR; Current Rating:0.16A |
| HMC481ST89 | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HMC478ST89ETR | 制造商:Hittite Microwave Corp 功能描述:HMC478 Series DC - 4 GHz SiGe HBT Gain Block MMIC Amplifier - SOT-89 |
| HMC479MP86 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz |
| HMC479MP86_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz |
| HMC479MP86E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 5GHZ MICRO-P |
| HMC479MP86ETR | 制造商:Hittite Microwave Corp 功能描述:NA ONLY -HMC479 Series DC - 5.0GHz SiGe HBT Gain Block MMIC Amplifier-MICRO-XPAC 制造商:Hittite Microwave Corp 功能描述:HMC479 Series DC - 5.0 GHz SiGe HBT Gain Block MMIC Amplifier - MICRO-XPAC |
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