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參數資料
| 型號： | HMMC-1002 |
| 英文描述： | DC-50 GHz Variable Attenuator(DC-50 GHz可變電壓衰減器) |
| 中文描述： | 的DC - 50 GHz的可變衰減器（直流50 GHz的可變電壓衰減器） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 89K |
| 代理商： | HMMC-1002 |
DC –50 GHz Variable Attenuator
Technical Data
HMMC-1002
Features
Specified Frequency Range:
DC -26.5 GHz
Return Loss:
10 dB
Minimum Attenuation:
2.0 dB
Maximum Attenuation:
30.0 dB
Description
The HMMC-1002 is a monolithic,
voltage variable, GaAs IC attenua-
tor that operates from DC to
50 GHz. It is fabricated using
MWTC’s MMICB process which
features an MBE epitaxial layer,
backside ground vias, and FET
gate lengths of approximately
0.4 mm. The variable resistive
elements of the HMMC-1002 are
two 750 mm wide series FETs
and four 200 mm wide shunt
FETs. The distributed topology of
the HMMC-1002 minimizes the
parasitic effects of its series and
shunt FETs, allowing the
HMMC-1002 to exhibit a wide
dynamic range across its full
bandwidth. An on-chip DC
reference circuit may be used to
maintain optimum VSWR for any
attenuation setting or to improve
the attenuation versus voltage
linearity of the attenuator circuit.
Absolute Maximum Ratings
[1]
Symbol
Parameters/Conditions
V
DC-RF
DC Voltage to RF Ports
V
1
V
1
Control Voltage
V
2
V
1
Control Voltage
V
DC
DC In/DC Out
P
in
RF Input Power
Minimum Ambient
Operating Temperature
Units
V
Min.
-0.6
Max.
+1.6
V
-5.0
+0.5
V
-5.0
+0.5
V
-0.6
+1.0
dBm
17
T
mina
°
C
-55
T
maxa
Maximum Ambient
Operating Temperature
°
C
+125
T
STG
T
max
Storage Temperature
°
C
°
C
-65
+165
Maximum Assembly Temp.
+300
Note:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device.
Chip Size:
Chip Size Tolerance:
Chip Thickness:
RF Pad Dimensions:
DC Pad Dimensions:
1470 x 610
μ
m (57.9 x 24.0 mils)
±
10
μ
m (
±
0.4 mils)
127
±
15
μ
m (5.0
±
0.6 mils)
60 x 70
μ
m (2.4 x 2.8 mils), or larger
75 x 75
μ
m (3.0 x 3.0 mils), or larger
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