- 您現在的位置：買賣IC網 > PDF目錄370642 > HMMC-5023 21.2-26.5 GHz High-Gain Low-Noise Amplifier(21.2-26.5 GHz 高增益低噪聲放大器) PDF資料下載
參數資料
| 型號： | HMMC-5023 |
| 英文描述： | 21.2-26.5 GHz High-Gain Low-Noise Amplifier(21.2-26.5 GHz 高增益低噪聲放大器) |
| 中文描述： | 21.2-26.5 GHz的高增益低噪聲放大器（21.2-26.5 GHz的高增益低噪聲放大器） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 82K |
| 代理商： | HMMC-5023 |
23 GHz LNA
(21.2–26.5 GHz)
Technical Data
Features
Frequency Range:
21.2–23.6 GHz and
24.5–26.5 GHz Specified
21–30 GHz Performance
Low Noise Temperature:
226 K (2.5 dB N.F.) Typical
High Gain:
24 dB Typical
50
Input/Output Matching
Single Supply Bias with
Optional Bias Adjust:
5 volts (@ 24 mA Typical)
Description
The HMMC-5023 MMIC is a high-
gain low-noise amplifier (LNA)
that operates from 21 GHz to over
30 GHz. By eliminating the
complex tuning and assembly
processes typically required by
hybrid (discrete-FET) amplifiers,
the HMMC-5023 is a cost-effective
alternative in 21.2–23.6 GHz and
24.5–26.5 GHz communications
receivers. The device has good
input and output match to
50 ohms and is unconditionally
stable to more than 40 GHz. The
backside of the chip is both RF
and DC ground. This helps
simplify the assembly process
and reduces assembly related
performance variations and costs.
It is fabricated using a PHEMT
integrated circuit structure that
provides exceptional noise and
gain performance.
Absolute Maximum Ratings
[1]
Symbol
Parameters/Conditions
V
D1
, V
D2
Drain Supply Voltage
V
D1
, V
D2
Gate Supply Voltage
I
D1
Drain Supply Current
I
D2
Drain Supply Current
P
in
RF Input Power
[2]
T
ch
Operating Channel Temp.
[3]
T
A
Backside Ambient Temp.
T
STG
Storage Temperature
T
max
Maximum Assembly Temp.
Notes:
1. Absolute maximum rating for continuous operation unless otherwise noted.
2. Operating at this power level for extended (continuous) periods is not
recommended.
3. Refer to
DC Specifications/Physical Properties
table for derating information.
Units
V
Min.
3
Max.
8
V
0.4
2
mA
35
mA
35
dBm
°
C
°
C
°
C
°
C
15
+150
-55
+140
-65
+165
+300
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
2980 x 620
μ
m (74 x 24.4 mils)
±
10
μ
m (
±
0.4 mils)
127
±
15
μ
m (5.0
±
0.6 mils)
80 x 80
μ
m (3.1 x 3.1 mils), or larger
HMMC-5023
相關PDF資料 |
PDF描述 |
|---|---|
| HMMC-5025 | 2 -50 GHz Wide band Distributed Amplifier(2 -50 GHz寬帶分布式放大器) |
| HMMC-5027 | 2 -26.5 GHz Broadband Traveling Wave Amplifier(2 -26.5 GHz 寬頻行波放大器（用于中等功率）) |
| HMMC-5032 | 17.7-32 GHz MMIC Power Amplifier(17.7-32 GHz單片微波集成電路功率放大器) |
| HMMC-5033 | 17.7-32 GHz MMIC Power Amplifier(17.7-32 GHz單片微波集成電路功率放大器) |
| HMMC-5034 | 37-43 GHz MMIC Power Amplifier(37-43 GHz單片微波集成電路功率放大器) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HMMC-5025 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 50GHZ 7V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5026 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 26.5GHZ 8V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5027 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 26.5GHZ 8V CHIP - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5032 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5033 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
發布緊急采購，3分鐘左右您將得到回復。