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參數資料
| 型號： | HMMC-5200 |
| 英文描述： | DC-20 GHz Feedback Amplifier(DC-20 GHz反饋放大器) |
| 中文描述： | 的DC - 20 GHz的反饋放大器（的DC - 20 GHz的反饋放大器） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 59K |
| 代理商： | HMMC-5200 |
DC –20 GHz HBT Series-Shunt
Amplifier
Technical Data
HMMC-5200
Features
High Bandwidth, F
-1dB
:
21 GHz Typical
Moderate Gain:
9.5 dB
±
1 dB @ 1.5 GHz
P
-1dB
@ 1.5 GHz:
12 dBm Typical
Low l/f Noise Corner:
<20 kHz Typical
Single Supply Operation:
>4.75 volts @ 44 mA Typ.
Low Power Dissipation:
190 mW Typ. for chip
Description
The HMMC-5200 is a DC to
20 GHz, 9.5 dB gain, feedback
amplifier designed to be used as a
cascadable gain block for a
variety of applications. The
device consists of a modified
Darlington feedback pair which
reduces the sensitivity to process
variations and provides 50 ohm
input/output port matches.
Furthermore, this amplifier is
fabricated using MWTD’s
Heterojunction Bipolar Transistor
(HBT) process which provides
excellent process uniformity,
reliability and 1/f noise perfor-
mance. The device requires a
single positive supply voltage and
generally operates Class-A for
good distortion performance.
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
410 x 460
μ
m (16.1 x 18.1 mils)
±
10
μ
m (
±
0.4 mils)
127
±
15
μ
m (5.0
±
0.6 mils)
70 x 70
μ
m (2.8 x 2.8 mils), or larger
Absolute Maximum Ratings
[1]
Symbol
Parameters/Conditions
V
CC
V
CC
Pad Voltage
V
PAD
Output Pad Voltage
P
in
RF Input Power
T
J
Junction Temperature
T
op
Operating Temperature
T
STG
Storage Temperature
T
max
Maximum Assembly Temp.
Note:
1. Operation in excess of any one of these ratings may result in permanent
damage to this device. For normal operation, all combined bias and thermal
conditions should be chosen such that the maximum Junction Temperature
(T
J
) is not exceeded. T
A
= 25
°
C except for T
op
, T
STG
, and T
max
.
Units
volts
Min.
Max.
8.0
volts
3.5
dBm
°
C
°
C
°
C
°
C
13
+150
-55
+85
-65
+165
+300
GND
IN
OUT
GND
V
CC
GND
GND
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