- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371864 > HN1A01FGR TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP PDF資料下載
參數(shù)資料
| 型號： | HN1A01FGR |
| 英文描述： | TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP |
| 中文描述： | 晶體管|晶體管|一對|進(jìn)步黨| 50V五（巴西）總裁| 150毫安一（c）|的TSOP |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 150K |
| 代理商： | HN1A01FGR |
HN1A01F
2001-06-07
1
TOSHIBA Transistor Silicon PNP
Epitaxial
Type (PCT Process)
HN1A01F
Audio Frequency General Purpose Amplifier
Applications
Small package (dual type)
High voltage and high current
: V
CEO
=
50V, I
C
=
1
50mA (max)
High h
FE
: h
FE
=
1
20~400
Excellent h
FE
linearity
: h
FE
(I
C
=
0.
1
mA) / h
FE
(I
C
=
2mA) = 0.95 (typ.)
Maximum Ratings
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
150
mA
Base current
I
B
30
mA
Collector power dissipation
P
C
*
300
mW
Junction temperature
T
j
125
C
Storage temperature range
T
stg
55~125
C
*
Total rating
Electrical Characteristics
(Ta = 25 C) (Q1,Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
―
V
CB
=
50V, I
E
= 0
―
―
0.1
μA
Emitter cut-off current
I
EBO
―
V
EB
=
5V, I
C
= 0
―
―
0.1
μA
DC current gain
h
FE (note)
―
V
CE
=
6V, I
C
=
2mA
120
―
400
―
Collector-emitter saturation voltage
V
CE (sat)
―
I
C
=
100mA, I
B
=
10mA
―
0.1
0.3
V
Transition frequency
f
T
―
V
CE
=
10V, I
C
=
1mA
80
―
―
MHz
Collector output capacitance
C
ob
―
V
CB
=
10V, I
E
= 0,
f = 1MHz
―
4
7
pF
Note: hFE Classification
Y (Y):
1
20~240, GR (G): 200~400
( ) Marking Symbol
JEDEC
EIAJ
TOSHIBA
Weight: 0.015g
―
―
2-3N1A
Unit: mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN1A01FUGR | TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN1A01FUY | TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN1A01FY | TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN1A01FU | PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| HN1A01F | PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN1A01F-GR | 制造商:Toshiba America Electronic Components 功能描述: |
| HN1A01F-GR(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| HN1A01F-GR(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:Transistor PNP Dual 50V 0.15A hfe200 SM6 |
| HN1A01F-GR-TE85R | 制造商:Toshiba America Electronic Components 功能描述: |
| HN1A01FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。