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參數資料
| 型號： | HN1B01FDW1T1 |
| 英文描述： | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 200MA I(C) | SC-74 |
| 中文描述： | 晶體管|晶體管|一對|互補| 50V五（巴西）總裁| 200mA的一（c）|律師- 74 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 70K |
| 代理商： | HN1B01FDW1T1 |
Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev. 0
Publication Order Number:
HN1B01FDW1T1/D
HN1B01FDW1T1
Complementary Dual
General Purpose
Amplifier Transistor
PNP and NPN Surface Mount
High Voltage and High Current: V
CEO
= 50 V, I
C
= 200 mA
High h
FE
: h
FE
= 200
400
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: 3A
ESD Rating
– Machine Model: C
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Value
Unit
Collector–Base Voltage
V
(BR)CBO
60
Vdc
Collector–Emitter Voltage
V
(BR)CEO
50
Vdc
Emitter–Base Voltage
V
(BR)EBO
7.0
Vdc
Collector Current – Continuous
I
C
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
P
D
380
mW
Junction Temperature
T
J
150
°
C
Storage Temperature
T
stg
–55 to +150
°
C
http://onsemi.com
SC–74
CASE 318F
STYLE 3
MARKING DIAGRAM
123
R9 M
R9
M
= Specific Device Code
= Date Code
Device
Package
Shipping
ORDERING INFORMATION
HN1B01FDW1T1
SC–74
3000/Tape & Reel
The “T1” suffix refers to a 7 inch reel.
Q
1
(4)
(5)
(6)
(1)
(2)
(3)
Q
2
654
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相關代理商/技術參數 |
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|---|---|
| HN1B01FDW1T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Dual General Purpose Amplifier Transistor |
| HN1B01FDW1T1G | 功能描述:兩極晶體管 - BJT 200mA 60V Dual Complementary RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| HN1B01FGR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN1B01F-GR(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN/PNP Dual 50V 0.15A hfe200 |
| HN1B01FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
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