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參數資料
| 型號： | HN1C01FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
| 中文描述： | npn型硅外延型（厘進程）通用音頻放大器應用 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 200K |
| 代理商： | HN1C01FE |
HN1C01FE
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1C01FE
Audio Frequency General Purpose Amplifier Applications
z
Small package (Dual type)
z
High voltage and high current
: V
CEO
= 50V, I
C
= 150mA (max)
z
High h
FE
: h
FE
= 120~400
z
Excellent h
FE
linearity
: h
FE
(I
C
= 0.1mA) / h
FE
(I
C
= 2mA) = 0.95 (typ.)
Absolute Maximum Ratings
(Ta = 25
°
C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
60
V
Collector-emitter voltage
50
V
Emitter-base voltage
5
V
Collector current
150
mA
Base current
30
mA
Collector power dissipation
100
mW
Junction temperature
150
°
C
°
C
Storage temperature range
55~150
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Electrical Characteristics
(Ta = 25
°
C) (Q1,Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
―
V
CB
= 60V, I
E
= 0
―
―
0.1
μ
A
Emitter cut-off current
I
EBO
―
V
EB
= 5V, I
C
= 0
―
―
0.1
μ
A
DC current gain
h
FE (Note)
―
V
CE
= 6V, I
C
= 2mA
120
―
400
Collector-emitter
saturation voltage
Transition frequency
V
CE (sat)
―
I
C
= 100mA, I
B
= 10mA
―
0.1
0.25
V
f
T
C
ob
―
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 0, f = 1MHz
80
―
―
MHz
Collector output capacitance
―
―
2
―
pF
Note: h
FE
Classification Y (Y): 120~240, GR (G): 200~400 ( ) Marking Symbol
Marking Equivalent Circuit
(Top View)
Type Name
JEDEC
JEITA
TOSHIBA
Weight: 3.0mg(typ.)
―
―
2-2N1G
Unit: mm
1
2
3
4
5
6
C1
hFE Rank
1
2
3
4
5
6
Q1
Q2
相關PDF資料 |
PDF描述 |
|---|---|
| HN1C01FGR | TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN1C01FUGR | JIS C 5432 standard waterproof connectors; HRS No: 114-2163-7 71; Shell Size (dia): 25; Operating Temperature Range (degrees C): -25 to 85; General Description: Cap |
| HN1C01FUY | JIS C 5432 standard waterproof connectors; HRS No: 114-2172-8 00 |
| HN1C01FY | TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN1C03FA | TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 300MA I(C) | TSOP |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HN1C01FE-GR(5L,F,T | 制造商:Toshiba America Electronic Components 功能描述:TRAN DUAL NPN 50V 0.15A ES6 |
| HN1C01FE-GR(T5L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN Dual 50V 0.15A hfe200 ES6 |
| HN1C01FE-GR(T5LCAF | 制造商:Toshiba America Electronic Components 功能描述: |
| HN1C01FE-Y(T5L,F,T | 制造商:Toshiba America Electronic Components 功能描述:TRAN DUAL NPN 50V 0.15A ES6 |
| HN1C01FGR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP |
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