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參數(shù)資料
型號(hào): HN1D01F
元件分類: 參考電壓二極管
英文描述: 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE
封裝: 1-3K1A, SC-74, 6 PIN
文件頁數(shù): 1/4頁
文件大小: 231K
代理商: HN1D01F
HN1D01F
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D01F
Ultra-High-Speed Switching Applications
Small package
Low forward voltage
: VF (3) = 0.92 V (typ.)
Fast reverse recovery time: trr = 1.6 ns (typ.)
Small total capacitance
: CT = 2.2 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300 (*)
mA
Average forward current
IO
100 (*)
mA
Surge current (10 ms)
IFSM
2 (*)
A
Power dissipation
P
300 (*)
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) These are the Absolute Maximum Ratings for a single diode (Q1 or Q2 or Q3 or Q4). If Unit 1 and Unit 2 are
used independently or simultaneously, the Absolute Maximum Ratings per diode are 75% of those of a single
diode.
Electrical Characteristics (Q1, Q2, Q3, Q4 Common, Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
IF = 1 mA
0.61
VF (2)
IF = 10 mA
0.74
Forward voltage
VF (3)
IF = 100 mA
0.92
1.20
V
IR (1)
VR = 30 V
0.1
Reverse current
IR (2)
VR = 80 V
0.5
μA
Total capacitance
CT
VR = 0, f = 1 MHz
2.2
4.0
pF
Reverse recovery time
trr
IF = 10 mA (Fig. 1)
1.6
4.0
ns
JEDEC
JEITA
SC-74
TOSHIBA
1-3K1A
Weight: 0.015 g (typ.)
Unit: mm
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