- 您現在的位置：買賣IC網 > PDF目錄371865 > HN1D01FE (Toshiba Corporation) Silicon Epitaxial Planar Type Ultra High Speed Switching Application PDF資料下載
參數資料
| 型號： | HN1D01FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
| 中文描述： | 硅外延平面型超高速開關應用 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 304K |
| 代理商： | HN1D01FE |
HN1D01FE
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D01FE
Ultra High Speed Switching Application
z
HN1D02FU is composed of 2 unit of cathode common.
z
Low forward voltage
z
Fast reverse recovery time : t
rr
= 1.6ns (typ.)
z
Small total capacitance
Absolute Maximum Ratings
(Ta
=
25
°
C)
: V
F (3)
= 0.92V (typ.)
: C
T
= 2.2pF (typ.)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V
RM
85
V
Reverse voltage
V
R
80
V
Maximum (peak) forward current
I
FM
300*
mA
Average forward current
I
O
100*
mA
Surge current (10ms)
I
FSM
2*
A
Power dissipation
P
100**
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55~150
°
C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
These are the Absolute Maximum Ratings for a single diode (Q1, Q2, Q3 or Q4).
Where Unit 1 and Unit 2 are used independently or simultaneously, the Absolute Maximum Ratings per diode
are 75% of those for a single diode.
** : Total rating.
Electrical Characteristics
(Q1, Q2, Q3, Q4 Common; Ta
=
25
°
C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
V
F (1)
V
F (2)
V
F (3)
I
R (1)
―
I
F
= 1mA
―
0.61
―
―
I
F
= 10mA
―
0.74
―
Forward voltage
―
I
F
= 100mA
V
R
= 30V
―
0.92
1.20
V
―
―
―
0.1
Reverse current
I
R (2)
C
T
t
rr
―
V
R
= 80V
V
R
= 0, f = 1MHz
I
F
= 10mA (fig.1)
―
―
0.5
μ
A
Total capacitance
―
―
2.2
―
pF
Reverse recovery time
―
―
1.6
―
ns
1.
2.
3.
4.
5.
6.
CATHODE
CATHODE
ANODE
CATHODE
CATHODE
ANODE
JEDEC
JEITA
―
―
TOSHIBA
1-2X1A
Weight: 0.003g (typ.)
Unit in mm
相關PDF資料 |
PDF描述 |
|---|---|
| HN1D01FU | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
| HN1D01F | DIODE (ULTRAL HIGH SPEED SWITCHING APPLICATIONS) |
| HN1D02FE | Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
| HN1D02FU | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
| HN1D02F | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HN1D01FE(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:SWITCHING DIODE 80V CA 6 ES6 |
| HN1D01FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
| HN1D01FU(T5L,F,T) | 功能描述:二極管 - 通用，功率，開關 85V Vrm 80VR 300mA 2A IFSM 0.92V VF RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| HN1D01FU(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:S/W Diode,Vr=80V,Io=0.1A,AC,US6 |
| HN1D01FU_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
發布緊急采購，3分鐘左右您將得到回復。