欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): HN1D04FU
廠商: Toshiba Corporation
英文描述: Ultra High Speed Switching Application
中文描述: 超高速開關(guān)應(yīng)用
文件頁數(shù): 1/4頁
文件大小: 197K
代理商: HN1D04FU
HN1D04FU
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D04FU
Ultra High Speed Switching Application
z
Low forward voltage
z
Fast reverse recovery time : t
rr
= 1.6ns (typ.)
z
Small total capacitance
Absolute Maximum Ratings
(Ta = 25°C)
: V
F(3)
= 0.90V (typ.)
: C
T
= 0.9pF (typ.)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V
RM
85
V
Reverse voltage
V
R
80
V
Maximum (peak) forward current
I
FM
300*
mA
Average forward current
I
O
100*
mA
Surge current (10ms)
I
FSM
2*
A
Power dissipation
P
200**
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55~150
°
C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Where Q1 and Q2 or Q3 and Q4 are used independently or simultaneously, the Absolute Maximum Ratings per
diode are 50% of those of the single diode.
** : Total rating
Electrical Characteristics
(Q1, Q2, Q3, Q4 Common; Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
V
F (1)
V
F (2)
V
F (3)
I
R (1)
I
F
= 1mA
0.60
I
F
= 10mA
0.75
Forward voltage
I
F
= 100mA
V
R
= 30V
0.90
1.20
V
0.1
Reverse current
I
R (2)
C
T
t
rr
V
R
= 80V
V
R
= 0, f = 1MHz
I
F
= 10mA (fig.1)
0.5
μ
A
Total capacitance
0.9
pF
Reverse recovery time
1.6
ns
1.ANODE1
2.CATHODE2
3.ANODE4
CATHODE3
4.ANODE3
5.CATHODE4
6.CATHODE1
ANODE2
US6
JEDEC
JEITA
TOSHIBA
Weight: 6.8mg (typ.)
1-2T1F
Unit in mm
相關(guān)PDF資料
PDF描述
HN1J02FU P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)
HN1K02FU N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)
HN1K03FU N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)
HN1K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN1D04FU(TE85L,F) 制造商:Toshiba America Electronic Components 功能描述:S/W Diode,Vr=80V,Io=0.1A,US6
HN1D04FUTE85LF 制造商:Toshiba America Electronic Components 功能描述:DIODE SW 80V 100MA US6
HN1E-BV402R 制造商:IDEC 功能描述:Push button switch
HN1E-BV411R 制造商:IDEC Corporation 功能描述:Push button switch
HN1E-BV4F02-R 制造商:IDEC CORPORATION 功能描述:Electromechanical Switch Emergency Stop Switch N.O./N.C. DPST 10A
主站蜘蛛池模板: 五常市| 诸城市| 开封县| 芜湖市| 福安市| 广丰县| 灌云县| 陕西省| 桂阳县| 齐齐哈尔市| 囊谦县| 偃师市| 新龙县| 泗洪县| 孟州市| 晋州市| 孟连| 莱阳市| 阿坝县| 盐山县| 五大连池市| 丁青县| 饶河县| 安丘市| 金门县| 大英县| 从江县| 禄丰县| 凤冈县| 威远县| 张家港市| 永州市| 东光县| 新源县| 崇信县| 高密市| 怀柔区| 文成县| 九龙县| 新巴尔虎左旗| 淮滨县|