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參數資料
型號: HN1K06FU
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
中文描述: 東芝場效應晶體管硅?頻道馬鞍山類型
文件頁數: 1/6頁
文件大小: 126K
代理商: HN1K06FU
HN1K06FU
2002-01-16
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K06FU
High Speed Switching Applications
Analog Switch Applications
High input impedance and extremely low drive current.
V
th
is low and it is possible to drive directly at low-voltage CMOS.
: V
th
= 0.5 to 1.5 V
Switching speed is fast.
Suitable for high-density mounting because of a compact package
Maximum Ratings
(Ta 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DS
20
V
Gate-source voltage
V
GSS
10
V
Drain current
I
D
100
mA
Drain power dissipation
P
D
(Note)
200
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: TOTAL rating
Electrical Characteristics
(Ta 25°C) (Q1, Q2 common)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
10 V, V
DS
0 V
1
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
100 A, V
GS
0 V
20
V
Drain cut-off current
I
DSS
V
DS
20 V, V
GS
0 V
1
A
Gate threshold voltage
V
th
V
DS
3 V, I
D
0.1 mA
0.5
1.5
V
Forward transfer admittance
Y
fs
V
DS
3 V, I
D
10 mA
35
62
mS
Drain-source ON resistance
R
DS (ON)
I
D
10 mA, V
GS
2.5 V
3.5
6.0
Input capacitance
C
iss
V
DS
3 V, V
GS
=0 V, f 1 MHz
14
pF
Reverse transfer capacitance
C
rss
V
DS
3 V, V
GS
=0 V, f 1 MHz
5.3
pF
Output capacitance
C
oss
V
DS
3 V, V
GS
=0 V, f 1 MHz
16
pF
t
on
V
DD
3 V, I
D
10 mA,
V
GS
0 to 2.5 V
0.28
Switching time
t
off
V
DD
3 V, I
D
10 mA,
V
GS
0 to 2.5 V
0.34
s
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2J1C
Weight: 6.8 mg
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