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參數資料
型號: HN29V102414T-50H
英文描述: Flash Application Design Guidelines Others
中文描述: Flash應用程序設計指南其他
文件頁數: 1/46頁
文件大小: 338K
代理商: HN29V102414T-50H
HN29V102414 Series
1G AND type Flash Memory
More than 32,113-sector (542,581,248-bit)
×
2
ADE-203-1265B (Z)
Rev. 1.0
Jan. 25, 2002
Description
The Hitachi HN29V102414 Series is a CMOS Flash Memory with AND type multi-level memory cells. It
has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29V102414 are more than 64,226 (98% of all
sector address) and less than 65,536 sectors.
Features
On-board single power supply (V
CC
): V
CC
= 2.7 V to 3.6 V
Organization
AND Flash Memory: (2048 + 64) bytes
×
(More than 32,113 sectors)
× 2
Data register: (2048 + 64) bytes
× 2
Multi-level memory cell
2 bit/per memory cell
Automatic programming
Sector program time: 1.0 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
Automatic erase
Single sector erase time: 1.0 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
相關PDF資料
PDF描述
HN29V1G91T-35 Flash Application Design Guidelines Others
HN29V51211T-50H Flash Application Design Guidelines Others
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HN29VB800R-12 x8/x16 Flash EEPROM
HN29VB800SERIES x8/x16 Flash EEPROM
相關代理商/技術參數
參數描述
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HN29V1G91T-35 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash Application Design Guidelines Others
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HN29V25611AT-50 制造商:Renesas Electronics Corporation 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8 50NS 48TSOP-I - Trays
HN29V25611AT-50H 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
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