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參數資料
| 型號： | HN2S03T |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Application |
| 中文描述： | 高速開關應用 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 158K |
| 代理商： | HN2S03T |
HN2S03T
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
HN2S03T
High Speed Switching Application
z
Two independent diodes are mounted on Thin Extreme Super Mini Quad
package that are suitable for higher mounting densities.
z
Low forward voltage
: V
F
(3)
= 0.50V (typ.)
z
Low reverse current
: I
R
= 0.5
μ
A (max)
z
Small total capacitance
: C
T
= 3.9pF (typ.)
Absolute Maximum Ratings
(Q1, Q2 Common, Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
V
RM
25
V
Reverse voltage
V
R
20
V
Maximum (peak) forward current
I
FM
100 *
mA
Average forward current
I
O
50 *
mA
Surge current (10ms)
I
FSM
1 *
A
Power dissipation
P
70 **
mW
Junction temperature
T
j
125
°
C
Storage temperature range
T
stg
55
～
125
°
C
Operating temperature range
T
opr
40
～
100
°
C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Unit rating. Total rating = Unit rating x 1.5
**: Total rating
Electrical Characteristics
(Q1, Q2 Common, Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
V
F
(1)
―
I
F
= 1mA
―
0.33
―
V
F
(2)
―
I
F
= 5mA
―
0.38
―
Forward voltage
V
F
(3)
―
I
F
= 50mA
―
0.50
0.55
V
Reverse current
I
R
―
V
R
= 20V
―
―
0.5
μ
A
Total capacitance
C
T
―
V
R
= 0, f = 1MH
z
―
3.9
―
pF
0
0.9±0.05
1.2±0.05
0
1
2
3
1
4
0
0
JEDEC
JEITA
TOSHIBA
Weight: 1.5mg(Typ.)
―
―
―
Unit: mm
1. ANODE1
2. ANODE2
3. CATHODE2
4. CATHODE1
TESQ
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