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參數資料
| 型號： | HN7G08FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | General-Purpose Amplifier Applications |
| 中文描述： | 通用放大器應用 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 231K |
| 代理商： | HN7G08FE |
HN7G08FE
2007-11-01
1
TOSHIBA Multichip Discrete Device
HN7G08FE
General-Purpose Amplifier Applications
Switching and Muting Switch Applications
Q1
Q1: 2SA1955F
Q2: RN1106F
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Low saturation voltage: V
CE (sat)
(1) =
15 mV (typ.)
@I
C
=
10 mA/I
B
=
0.5 mA
Large collector current: I
C
=
400 mA (max)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
15
V
Collector-emitter voltage
V
CEO
12
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
400
mA
Base current
I
B
50
mA
Q2 Absolute Maximum Ratings (
Ta = 25°C
)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
P
C
*
100
mW
Junction temperature
T
j
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating.
1. EMITTER1
2. BASE1
3. COLLECTOR2
4. EMITTER2
5. BASE2
6. COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
JEDEC
―
JEITA
―
TOSHIBA
2-2J1E
Weight: 0.003 g (typ.)
Unit: mm
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| HN7G08FE-A | 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N Ic=-400mA IC=100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| HN7G08FE-A(TE85L,F | 功能描述:兩極晶體管 - BJT Vceo=-12V Vceo=50V Ic=-400mA IC=100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| HN7G09FE | 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N Ic=100mA Id=100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| HN7G09FE(TE85L,F) | 功能描述:兩極晶體管 - BJT Vceo=50V Vds=30V Ic=100mA Id=100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| HN7G10FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Management Switch Applications |
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