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參數資料
| 型號： | HP4936DYT |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5.8A I(D) | SO |
| 中文描述： | 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 152K |
| 代理商： | HP4936DYT |
2001 Fairchild Semiconductor Corporation
HP4936DY Rev. B
HP4936DY
5.8A, 30V, 0.037 Ohm, Dual N-Channel,
Logic Level Power MOSFET
This power MOSFET is manufactured using an innovative
process. This advanced process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Features
Logic Level Gate Drive
5.8A, 30V
r
DS(ON)
= 0.037
at I
D
= 5.8A, V
GS
= 10V
r
DS(ON)
= 0.055
at I
D
= 4.7A, V
GS
= 4.5V
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
SO-8
Ordering Information
PART NUMBER
PACKAGE
BRAND
HP4936DY
SO-8
P4936DY
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HP4936DYT.
G1(2)
D1(8)
D1(7)
S1(1)
D2(6)
D2(5)
S2(3)
G2(4)
Data Sheet
December 2001
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