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參數資料
| 型號： | HPLR3103T |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 52A I(D) | TO-252AA |
| 中文描述： | 52 A, 30 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數： | 1/7頁 |
| 文件大小： | 117K |
| 代理商： | HPLR3103T |
2001 Fairchild Semiconductor Corporation
HPLR3103, HPLU3103 Rev. B
HPLR3103, HPLU3103
52A, 30V, 0.019 Ohm, N-Channel Logic
Level, Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Features
Logic Level Gate Drive
52A
, 30V
Low On-Resistance, r
DS(ON)
= 0.019
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
temperature. Package limited to 20A continuous, see Figure 9.
Calculated continuous current based on maximum allowable junction
Symbol
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
HPLU3103
TO-251AA
HP3103
HPLR3103
TO-252AA
HP3103
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-252AA variant in tape and reel, e.g., HPLR3103T.
D
G
S
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
December 2001
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