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參數(shù)資料
| 型號(hào)： | HRF503A |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Schottky Barrier Diode for Rectifying(用于整流的肖特基勢(shì)壘二極管) |
| 中文描述： | 硅肖特基二極管整頓（用于整流的肖特基勢(shì)壘二極管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 31K |
| 代理商： | HRF503A |
HRF503A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-401 (Z)
Rev. 0
Oct. 1995
Features
Low forward voltage drop and suitable for high effifiency rectifying.
DO-214 is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HRF503A
503A
DO-214
Outline
1
2
1. Cathode
2. Anode
Cathode mark
Mark
503A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
*
I
O
*
I
FSM
*
Tj
1
35
V
Average forward current
2
5
A
Non-Repetitive peak forward surge current
3
100
A
Junction temperature
125
°C
Storage temperature
Notes: 1. See Fig.5 & Fig.7
2. See Fig.4 & Fig.6
3. 10msec sine wave 1 pulse
Tstg
–40 to +125
°C
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