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參數資料
| 型號： | HRW1002AS |
| 文件頁數： | 1/3頁 |
| 文件大小： | 20K |
| 代理商： | HRW1002AS |
Features
Low forward voltage drop and suitable for high
effifiency rectifying.
Same power as
TO-220AB
.
Small outline compared with
TO-220AB
.
Ordering Information
Type No.
Laser Mark
Package Code
HRW1002A L
W1002A
LDPAK L
Pin Arrangement
1
2
3
1 Anode
2 Cathode
3 Anode
ADE-208-240A(Z)
Rev. 1
Aug. 1994
HRW1002A L
Silicon Schottky Barrier Diode
for Rectifying
Absolute Maximum Ratings
(Ta = 25°C)
*
Item
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
**
I
o
***
I
FSM
****
T
j
T
stg
20
V
Average forward current
10
A
Non-Repetitive peak forward surge current
75
A
Junction temperature
125
°C
Storage temperature
-40 to +125
°C
* Per one device
** See Fig.5
*** Square wave, Duty (1/2), Sum of two devices See Fig.4
**** Sine wave 10msec
Electrical Characteristics
(Ta = 25°C)
*
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
—
—
0.42
V
I
F
= 5.0 A
Reverse current
I
R
—
—
1.0
mA
V
R
= 20 V
ESD-capability
—
500
—
—
V
C=200pF
Both forward and reverse
direction 1 pulse
Thermal resistance
R
th(j-c)
—
1.5
—
°C/W
* Per one device
相關PDF資料 |
PDF描述 |
|---|---|
| HRW1002B | |
| HRW1002AL | Silicon Schottky Barrier Diode for Rectifying(用于整流的肖特基勢壘二極管) |
| HRW1002AW | Silicon Schottky Barrier Diode for Rectifying(用于整流的肖特基勢壘二極管) |
| HRW1002A | Silicon Schottky Barrier Diode for Rectifying(用于整流的肖特基勢壘二極管) |
| HRW1002AS | Silicon Schottky Barrier Diode for Rectifying(用于整流的肖特基勢壘二極管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HRW2502AL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HRW2502AS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HRW2502B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HRW26 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Schottky Barrier Diode for High Frequency Rectifying |
| HRW36 | 制造商:Renesas Electronics Corporation 功能描述: |
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