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參數資料
| 型號： | HS-1254RH |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened, High Speed, Low Power Dual Operational Amplifier with Disable |
| 中文描述： | 輻射加固，高速，低功耗雙路運算放大器具有禁用 |
| 文件頁數： | 2/3頁 |
| 文件大小： | 18K |
| 代理商： | HS-1254RH |
2
Die Characteristics
DIE DIMENSIONS
Size: 1750
μ
m x 2330
μ
m (69 mils x 92 mils)
Thickness: 483
μ
m (19 mils)
GLASSIVATION
Type: Nitride
Thickness: 4k
±
0.5k
METALLIZATION
Metal 1
Type: AlCu(2%)/TiW
Thickness: 8k
±
0.4k
Metal 2
Type: AlCu(2%)
Thickness: 16k
±
0.8k
SUBSTRATE
DI, Bonded Wafer
BACKSIDE FINISH
Silicon
SUBSTRATE POTENTIAL
Floating (Recommend connection to V-)
TRANSISTOR COUNT:
180
Metallization Mask Layout
HS-1254RH
NOTE:
1. This is an optional GND pad. Users may set a GND reference, via this pad, to ensure the TTL compatibility of the DISABLE inputs when
using asymmetrical supplies (e.g., V+ = 10V, V- = 0V).
-IN1
OUT1
-IN2
GND (SEE NOTE 1)
V-
OUT2
V+
NC
NC
+IN1
+IN2
DISABLE1
DISABLE2
V-
HS-1254RH
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| HS9-1254RH-Q | Radiation Hardened, High Speed, Low Power Dual Operational Amplifier with Disable |
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