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參數(shù)資料
| 型號(hào)： | HS-2100RH |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened High Frequency Half Bridge Driver(抗輻射高頻半橋N勾道MOSFET驅(qū)動(dòng)器) |
| 中文描述： | 高頻輻射加固半橋驅(qū)動(dòng)器（抗輻射高頻半橋?勾道MOSFET的驅(qū)動(dòng)器） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 73K |
| 代理商： | HS-2100RH |
1
File Number
4562.3
HS-2100RH
Radiation Hardened High Frequency
Half Bridge Driver
The Radiation Hardened HS-2100RH is a high frequency,
100V Half Bridge N-Channel MOSFET Driver IC, which is a
functional, pin-to-pin replacement for the Intersil HIP2500
and the industry standard 2110 types. The low-side and
high-side gate drivers are independently controlled. This
gives the user maximum flexibility in dead-time selection and
driver protocol.
In addition, the device has on-chip error detection and
correction circuitry, which monitors the state of the high-side
latch and compares it to the HIN signal. If they disagree, a
set or reset pulse is generated to correct the high-side latch.
This feature protects the high-side latch from SEUs.
Undervoltage on the high-side supply forces HO low. When
that supply returns to a valid voltage, HO will go to the state
of HIN. Undervoltage on the low-side supply forces both LO
and HO low. When that supply becomes valid, LO returns to
the LIN state and HO returns to the HIN state.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for the HS-2100RH are
contained in SMD 5962-99536. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
This link will not be available until the SMD is finalized.
Features
Electrically Screened to DESC SMD # 5962-99536
QML Qualified per MIL-PRF-38535 Requirements
Radiation Environment
- Maximum Total Dose . . . . . . . . . . . . . .3 x 10
5
RAD(SI)
- DI RSG Process Provides Latch-up Immunity
- Vertical Architecture Provides Low Dose Rate Immunity
Bootstrap Supply Max Voltage to 120V
Drives 1000pF Load at 1MHz with Rise and Fall Times of
45ns (Typ)
1A (Typ) Peak Output Current
Independent Inputs for Non-Half Bridge Topologies
Low DC Power Consumption . . . . . . . . . . . . . 60mW (Typ)
Operates with V
DD
= V
CC
Over 12V to 20V Range
Supply Undervoltage Protection
Applications
High Frequency Switch-Mode Power Supplies
Drivers for Inductive Loads
DC Motor Drivers
Pinout
HS-2100RH
FLATPACK (CDFP4-F16)
TOP VIEW
Ordering Information
ORDERING NUMBER
INTERSIL MKT.
NUMBER
TEMP.
RANGE (
o
C)
5962F9953601VXC
HS9-2100RH-Q
-55 to 125
5962F9953601QXC
HS9-2100RH-8
-55 to 125
HS9-2100RH/Proto
HS9-2100RH/Proto
-55 to 125
LO
COM
V
CC
NC
NC
VS
VB
HO
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
NC
V
SS
LIN
SD
HIN
V
DD
NC
NC
Data Sheet
June 1999
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 1999
相關(guān)PDF資料 |
PDF描述 |
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| HS9-2100RH-8 | Radiation Hardened High Frequency Half Bridge Driver |
| HS9-2100RH-Q | Radiation Hardened High Frequency Half Bridge Driver |
| HS9-22620RH | Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier |
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