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參數資料
| 型號： | HS1-81C56RH-8 |
| 廠商： | INTERSIL CORP |
| 元件分類： | DRAM |
| 英文描述： | Radiation Hardened 256 x 8 CMOS RAM |
| 中文描述： | 256 X 8 MULTI-PORT SRAM, CDIP40 |
| 封裝： | SIDE BRAZED, CERAMIC, DIP-40 |
| 文件頁數： | 11/11頁 |
| 文件大小： | 122K |
| 代理商： | HS1-81C56RH-8 |
11
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Die Characteristics
DIE DIMENSIONS:
222mils x 202mils x 14mils
±
1mil (Die Thickness)
INTERFACE MATERIALS:
Glassivation:
Type: SiO2
Thickness: 8k
±
1k
Top Metallization:
Type: AlSi
Thickness: 11k
±
2k
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
Metallization Mask Layout
HS-81C55RH, HS-81C56RH
TIMER OUT (6)
IO/M (7)
CE OR CE (8)
A
A
A
A
(
(
(
(
(
(
(
(
(
(
(
A
G
P
P
P
P
P
P
RD (9)
WR (10)
ALE (11)
AD0 (12)
AD1 (13)
AD2 (14)
(34) PB5
(33) PB4
(32) PB3
(31) PB2
(30) PB1
(29) PB0
(28) PA7
(27) PA6
HS-81C55RH, HS-81C56RH
相關PDF資料 |
PDF描述 |
|---|---|
| HS1-81C56RH-Q | Radiation Hardened 256 x 8 CMOS RAM |
| HS1100 | RELATIVE HUMIDITY SENSOR |
| HS1101 | RELATIVE HUMIDITY SENSOR |
| HS13 | HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V) |
| HS11 | HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HS1-81C56RH-Q | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 256 x 8 CMOS RAM |
| HS1820A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Peripheral IC |
| HS1820B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Peripheral IC |
| HS18230 | 功能描述:SCHOTTKY RECTIFIER 180A 30V RoHS:是 類別:半導體模塊 >> 二極管，整流器 系列:- 標準包裝:10 系列:- 電壓 - 在 If 時為正向 (Vf)（最大）:1.45V @ 30A 電流 - 在 Vr 時反向漏電:15µA @ 400V 電流 - 平均整流 (Io)（每個二極管）:30A 電壓 - (Vr)（最大）:400V 反向恢復時間(trr):65ns 二極管類型:標準 速度:快速恢復 = 200mA（Io） 二極管配置:2 個獨立式 安裝類型:底座安裝 封裝/外殼:ISOTOP 供應商設備封裝:ISOTOP? 包裝:管件 |
| HS18230_11 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:180 Amp Schottky Rectifier |
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