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參數資料
| 型號： | HS1B |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 1.0 AMP. High Efficient Surface Mount Rectifiers |
| 中文描述： | 1.0安培。高效表面貼裝二極管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 66K |
| 代理商： | HS1B |
- 300 -
.062(1.58)
.050(1.27)
.012(.31)
.006(.15)
.008(.20)
.004(.10)
.056(1.41)
.035(0.90)
.187(4.75)
.160(4.06)
.210(5.33)
.195(4.95)
.111(2.83)
.090(2.29)
.091(2.30)
.078(1.99)
HS1A
THRU
HS1M
1.0 AMP. High Efficient Surface Mount Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
SMA/DO-214AC
Features
Glass passivated junction chip.
For surface mounted application
Low forward voltage drop
Low profile package
Built-in stain relief, ideal for automatic
placement
Fast switching for high efficiency
High temperature soldering:
260
℃
/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-O
Mechanical Data
Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packing: 12mm tape per E1A STD RS-481
Weight: 0.064 gram
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Dimensions in inches and (millimeters)
Symbol
HS
1A
50 100 200 300 400 600 800 1000
35
70 140 210 280 420 560 700
50 100 200 300 400 600 800 1000
1.0
HS
1B
HS
1D
HS
1F
HS
1G
HS
1J
HS
1K
HS
1M
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig.2
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current @ T
A
=25
℃
at Rated DC Blocking Voltage @ T
A
=100
℃
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
V
RRM
V
RMS
V
DC
V
V
V
A
I
(AV)
I
FSM
30
A
V
F
1.0
1.3
1.7
V
uA
uA
nS
pF
℃
/W
℃
℃
I
R
5.0
100
Trr
Cj
R
θ
JA
T
J
T
STG
50
20
75
15
Maximum Thermal Resistance ( Note 3 )
70
Operating Temperature Range
-55 to +150
-55 to +150
Storage Temperature Range
Notes: 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied V
R
=4.0 Volts
3.
Mounted on P.C.B. with 0.2”x0.2” ( 5 x 5 mm ) Copper Pad Areas.
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