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參數(shù)資料
| 型號(hào)： | HS3GB |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 3.0 AMPS. High Efficient Surface Mount Rectifiers |
| 中文描述： | 3.0安培。高效表面貼裝二極管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 199K |
| 代理商： | HS3GB |
Dimensions in inches and (millimeters)
Version: A06
HS3AB
-
HS3MB
3.0 AMPS. High Efficient Surface Mount Rectifiers
SMB/DO-214AA
.083(2.10)
.012(.31)
.012(.31)
.008(.20)
.056(1.41)
.147(3.73)
.187(4.75)
.103(2.61)
.209(5.30)
Features
Glass passivated junction chip.
For surface mounted application
Low forward voltage drop
Low profile package
Built-in stain relief, ideal for automatic
placement
Fast switching for high efficiency
High temperature soldering:
260
o
C/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V0
Mechanical Data
Cases: Molded plastic
Terminals: Pure tin plated, lead free
Polarity: Indicated by cathode band
Packing: 16mm tape per EIA STD RS-481
Weight: 0.21 gram
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
HS
3AB
HS
3BB
HS
3DB
HS
3FB
HS
3GB
HS
3JB
HS
3KB
HS
3MB
Units
Maximum Recurrent Peak Reverse Voltage
V
RRM
50
100 200
300
400 600 800 1000
V
Maximum RMS Voltage
V
RMS
35
70
140
210
280 420 560 700
V
Maximum DC Blocking Voltage
V
DC
50
100 200
300
400 600 800 1000
V
Maximum Average Forward Rectified Current
See Fig. 1
I
(AV)
3.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
I
FSM
150
A
Maximum Instantaneous Forward Voltage
@ 3.0A
V
F
1.0
1.3
1.7
V
Maximum DC Reverse Current @ T
A
=25
o
C
at Rated DC Blocking Voltage @ T
A
=125
o
C
I
R
10
250
uA
uA
Maximum Reverse Recovery Time ( Note 1 )
Trr
50
75
nS
Typical Junction Capacitance ( Note 2 )
Cj
80
50
pF
Operating Temperature Range
T
J
-55 to +150
o
C
Storage Temperature Range
T
STG
-55 to +150
o
C
Notes:
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied V
R
=4.0 Volts.
3. Measured on P.C.Board with 0.6” x 0.6” (16mm x 16mm) Copper Pad Area.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HS3GR6 | 制造商:Taiwan Semiconductor 功能描述:Hi-eff rectifier diode,1A,HS3G R6 |
| HS3J | 功能描述:整流器 3.0 Amp 600 Volt 150 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| HS3J R6 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 600V 3A 2-Pin SMC T/R |
| HS3JB | 功能描述:整流器 3A,600V,GLASS Pass HIGH Eff SMD Rect RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| HS3K | 功能描述:整流器 3.0 Amp 800 Volt 150 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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