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參數(shù)資料
| 型號： | HSB507 |
| 英文描述： | PNP-60V-3A30W|Bipolar Transistors |
| 中文描述： | 進步黨- 60V的，3A30W |雙極晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 34K |
| 代理商： | HSB507 |
HI-SINCERITY
MICROELECTRONICS CORP.
HSB507
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6702-B
Issued Date : 1993.04.12
Revised Date : 2000.09.30
Page No. : 1/3
HSMC Product Specification
Description
The HSB507 is designed for use in power amplifier and switching
circuits.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) .................................................................................... 30 W
Total Power Dissipation (Ta=25
°
C)...................................................................................... 2 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... -60 V
BVCEO Collector to Emitter Voltage.................................................................................. -60 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current............................................................................................................. -3 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICEO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
-60
-60
-5
-
-
-
-
-
40
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
8
Max.
-
-
-
-100
-1
-5
-1
-1.5
-
320
-
Unit
V
V
V
uA
mA
mA
V
V
Test Conditions
IC=-1mA, IE=0
IC=-10mA, IB=0
IE=-1mA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
VCE=-60V, IB=0
IC=-2A, IB=-0.2A
IC=-1A, VCE=-2V
IC=-0.1A, VCE=-2V
IC=-1A, VCE=-2V
VCE=-5V, IC=-500mA, f=100MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
Classification Of hFE2
Rank
hFE
C
D
E
F
40-80
60-120
100-200
160-320
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