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參數資料
| 型號： | HSC945SP |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 37K |
| 代理商： | HSC945SP |
HI-SINCERITY
MICROELECTRONICS CORP.
HSC945
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6517
Issued Date : 1995.02.11
Revised Date : 2002.12.16
Page No. : 1/4
HSC945
HSMC Product Specification
Description
The HSC945 is designed for using driver stage of AP amplifier and
low speed switching applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150
°
C
Junction Temperature...................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 250 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 50 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
IB Base Current................................................................................................................ 50 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE1
*hFE2
fT
Cob
Min.
60
50
5
-
-
-
50
135
150
-
Typ.
-
-
-
-
-
0.1
-
-
-
-
Max.
-
-
-
100
100
0.3
-
600
600
4
Unit
V
V
V
nA
nA
V
Test Conditions
IC=100uA, IE=0
IC=1mA. IB=0
IE=10uA. IC=0
VCB=60V, IE=0
VEB=5V, IB=0
IC=100mA, IB=10mA
VCE=6V, IC=0.1mA
VCE=6V, IC=1mA
VCE=6V, IC=10mA, f=100MHz
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification of hFE2
Rank
Range
Q
P
K
135-270
200-400
300-600
TO-92
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