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參數資料
| 型號： | HSCH-9101 |
| 英文描述： | GaAs Beam Lead Schottky Barrier Diodes (48K in pdf) |
| 中文描述： | 砷化鎵梁式引線肖特基二極管（48,000 PDF格式） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 127K |
| 代理商： | HSCH-9101 |
3-64
Beam Lead Schottky Diodes for
Mixers and Detectors
(1– 26 GHz)
Technical Data
HSCH-5300 Series
Features
Platinum Tri-Metal System
High Temperature Stability
Silicon Nitride Passivation
Stable, Reliable Performance
Low Noise Figure
Guaranteed 7.5 dB at 26 GHz
High Uniformity
Tightly Controlled Process
Insures Uniform RF
Characteristics
Rugged Construction
4 Grams Minimum Lead Pull
Low Capacitance
0.10 pF Max. at 0 V
Polyimide Scratch Protection
Description
These beam lead diodes are
constructed using a metal-
semiconductor Schottky barrier
junction. Advanced epitaxial
techniques and precise process
control insure uniformity and
repeatability of this planar
passivated microwave semicon-
ductor. A nitride passivation layer
provides immunity from
contaminants which could
otherwise lead to I
R
drift.
The HP beam lead process allows
for large beam anchor pads for
rugged construction (typical
6gram pull strength) without
degrading capacitance.
Outline 07
Maximum Ratings
Pulse Power Incident at T
A
= 25
°
C ................................................... 1 W
Pulse Width = 1
μ
s, Du = 0.001
CW Power Dissipation at T
A
= 25
°
C........................................... 150 mW
Measured in an infinite heat sink derated linearly
to zero at maximum rated temperature
T
OPR
– Operating Temperature Range........................... -65
°
C to +175
°
C
T
STG
– Storage Temperature Range ............................... -65
°
C to +200
°
C
Minimum Lead Strength ................................... 4 grams pull on any lead
Diode Mounting Temperature ........................... +350
°
C for 10 sec. max.
These diodes are ESD sensitive. Handle with care to avoid static
discharge through the diode.
130 (5)
100 (4)
CATHODE
SILICON
GLASS
GOLD LEADS
135 (5)
90 (3)
310 (12)
250 (10)
225 (9)
200 (8)
225 (9)
170 (7)
710 (28)
670 (26)
DIMENSIONS IN
μ
m (1/1000 inch)
135 (5)
90 (3)
60 (2)
40 (1)
12 (.5)
8 (.3)
30 MIN (1)
5965-8849E
相關PDF資料 |
PDF描述 |
|---|---|
| HSCH-9161 | Zero Bias Beamlead Detector Diode (82K in pdf) |
| HSCH-9201 | GaAs Beam Lead Schottky Barrier Diodes (48K in pdf) |
| HSCH-9251 | Beamlead GaAs Schottky barrier diodes |
| HSCH-9301 | Beamlead GaAs Schottky barrier diodes |
| HSCH-9351 | GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes (53K in pdf) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HSCH-9102 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:GaAs Beam Lead Schottky Barrier Diodes |
| HSCH-9151 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:GaAs Beam Lead Schottky Barrier Diodes |
| HSCH-9161 | 制造商:Agilent Technologies 功能描述:RF DETECTOR SCHOTTKY 10V 2PIN - Gel-pak, waffle pack, wafer, diced wafer on film 制造商:Agilent Technologies 功能描述:0-BIAS BEAM-LEAD DETECTOR 制造商:Avago Technologies 功能描述:SCHOTTKY BEAMLEAD DIODE - Gel-pak, waffle pack, wafer, diced wafer on film |
| HSCH-9162 | 制造商:Agilent Technologies 功能描述:SCHOTTKY BEAMLEAD DIODE 制造商:Agilent Technologies 功能描述:RF DETECTOR SCHOTTKY 10V 3PIN - Gel-pak, waffle pack, wafer, diced wafer on film |
| HSCH-9201 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GaAs Beam Lead Schottky Barrier Diodes (48K in pdf) |
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