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參數(shù)資料
| 型號： | HSDL-3210-021 |
| 廠商： | Avago Technologies Ltd. |
| 英文描述： | IrDA㈢ Compliant Low Power 1.15 Mbit/s Infrared Transceiver |
| 中文描述： | 紅外㈢符合低功耗1.15 Mbit / s的紅外收發(fā)器 |
| 文件頁數(shù)： | 6/24頁 |
| 文件大?。?/td> | 475K |
| 代理商： | HSDL-3210-021 |
6
Electrical and Optical Specifications
Specifications hold over the recommended operating conditions unless otherwise noted. Unspecified test conditions may be
anywhere in their operating range. All typical values are at 25
°
C and 3.0 V unless otherwise noted.
Parameter
Receiver
RXD Output Voltage
Symbol
Min.
Typ.
Max.
Units
Conditions
Notes
Logic High
V
OH
IOV
CC
-0.2
IOV
CC
V
I
OH
=-200
μ
A, EI
≤
0.3
μ
W/cm
2
I
OL
=200
μ
A
Logic Low
V
OL
2
φ
1/2
λ
p
t
PW
(SIR)
t
PW
(MIR)
t
R
, t
F
t
L
t
RW
0
30
0.4
V
°
nm
μ
s
ns
ns
μ
s
μ
s
8
Viewing Angle
Peak Sensitivity Wavelength
RXD Pulse Width (SIR)
RXD Pulse Width (MIR)
RXD Rise and Fall Times
Receiver Latency Time
Receiver Wake Up Time
Transmtter
Radiant Intensity (SIR)
Radiant Intensity (MIR)
Peak Wavelength
Spectral Line Half Width
Viewing Angle
Optical Pulse Width (SIR)
Optical Pulse Width
(MIR, IOV
CC
≥
1.5 V)
Optical Rise and Fall Times (SIR)
880
1
200
7.5
750
100
50
100
C
L
=10 pF
C
L
=10 pF
C
L
=10 pF
8,9
9
25
25
30
10
11
IE
H
IE
H
λ
p
λ
1/2
2
φ
1/2
tpw
4
9
15
30
875
35
28.8
72
mW/Sr T
A
=25
°
C,
θ
1/2
≤
15
°
, TXD
≥
V
IH
mW/Sr T
A
=25
°
C,
θ
1/2
≤
15
°
, TXD
≥
V
IH
nm
nm
°
μ
s
tpw(TXD) = 1.6
μ
s
30
1.41
60
2.23
1.6
tpw
tr (EI)
tf (EI)
tr (EI)
tf (EI)
I
VLED
I
VLED
I
VLED
148
217
50
260
600
ns
ns
tpw(TXD) = 217 ns
tpw(TXD) = 1.6
μ
s
Optical Rise and Fall Times (MIR)
30
40
ns
tpw(TXD) = 1.6
μ
s
LED Current
On (SIR)
On (MIR)
Current Off
60
150
0.005
72
180
1
mA
mA
μ
s
V
VLED
=V
CC
=3.6 V, V
I
(TXD)
≥
V
IH
V
VLED
=V
CC
=3.6 V, V
I
(TXD)
≥
V
IH
V
VLED
=V
CC
=3.6 V, V
I
(TXD)
≤
V
IL
Transceiver
TXD Input Current
High
Low
Shutdown
I
H
I
L
I
CC1
10
-10
0.01
200
-200
nA
nA
μ
A
V
I
≥
V
IH
0
≤
V
I
≤
V
IL
V
CC
=3.6 V, V
SD
≥
V
CC
- 0.5,
T
A
=25
°
C
V
CC
=3.6 V, V
I
(TXD)
≤
V
IL
,EI=0
V
CC
=3.6 V, V
I
(TXD)
≤
V
IL
Supply Current
Idle
Active,
Receive
I
CC2
I
CC3
300
0.8
450
3.0
μ
A
mA
12,13
Notes:
7. An in-band optical signal is a pulse/sequence where the peak wavelength,
λ
p, is defined as 850 nm
≤ λ
p
≤
900 nm
and the pulse characteristics are compliant with the IrDA Serial Infrared Physical Layer Link Specification.
8. For in band signals
≤
1.152 Mbps where 9
μ
W/cm
2
≤
EI
≤
500 mW/cm
2
.
9. For 0.576 Mbps
≤
in band signals
≤
1.152 Mbps where 22.5
μ
W/cm
2
≤
EI
≤
500 mW/cm
2
.
10. Latency is defined as the time fromthe last TXD light output pulse until the receiver has recovered full sensitivity.
11. Receiver wake up time is measured fromthe SD pin high to low transition or V
CC
power on, to valid RXD output.
12. Typical values are at EI = 10 mW/cm
2
.
13. Maximumvalue is at EI = 500 mW/cm
2
.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSDL-3211 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:IrDA㈢ Data Compliant Low Power 1.15 Mbit/s Infrared Transceiver |
| HSDL-3211-021 | 功能描述:紅外收發(fā)器 Short Distance 3V M IR RoHS:否 制造商:Vishay Semiconductors 波長:900 nm 連續(xù)數(shù)據(jù)傳輸:115.2 Kbit/s 傳輸距離:1 m 輻射強(qiáng)度:60 mW/sr 半強(qiáng)度角度:44 deg 脈沖寬度:2 us 最大上升時(shí)間:100 ns 最大下降時(shí)間:100 ns LED 電源電壓:- 0.5 V to 6 V 最大正向電流:80 mA 工作電壓:2.4 V to 5.5 V 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 尺寸:6 mm x 3.1 mm x 1.9 mm 封裝 / 箱體: 封裝:Reel |
| HSDL-3220 | 制造商:Avago Technologies 功能描述:TRANSCEIVER IRDA 4MB/S |
| HSDL-3220-001 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:IrDA㈢ Data Compliant Low Power 4.0 Mbit/s Infrared Transceiver |
| HSDL-3220-021 | 功能描述:紅外收發(fā)器 20-30cm 3V FIR RoHS:否 制造商:Vishay Semiconductors 波長:900 nm 連續(xù)數(shù)據(jù)傳輸:115.2 Kbit/s 傳輸距離:1 m 輻射強(qiáng)度:60 mW/sr 半強(qiáng)度角度:44 deg 脈沖寬度:2 us 最大上升時(shí)間:100 ns 最大下降時(shí)間:100 ns LED 電源電壓:- 0.5 V to 6 V 最大正向電流:80 mA 工作電壓:2.4 V to 5.5 V 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 尺寸:6 mm x 3.1 mm x 1.9 mm 封裝 / 箱體: 封裝:Reel |
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